Compound gallium nitride based semiconductor growing substrate and producing method thereof

Abstract

The invention provides a compound gallium nitride based semiconductor growing substrate, which includes: a base plate, a lattice buffer layer and a lattice transferring layer, wherein the lattice buffer layer formed on a silica glass is composed of diamond-like carbon (DLC); the lattice transferring layer is formed on the lattice buffer layer and in a polycrystalline structure, the lattice coefficient is between the gallium nitride (GaN) and DLC. Ordinary base plates such as silica glass or metal base plate and the like are used for growing the gallium nitride based semiconductor materials, thereby the lattice mismatch and the thermal mismatch are caused, and due to the combination of the DLC and the nitride, the problems of the lattice mismatch and the thermal mismatch are solved, thereby the costs of existing gallium nitride based semiconductor growing substrate are reduced, simultaneously, the quality of gallium nitride based semiconductor materials which grow subsequently is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to a composite gallium nitride-based semiconductor growth substrate and a manufacturing method thereof. Background technique [0002] Gallium nitride-based semiconductor materials are the core basic materials for preparing light-emitting devices used in the fields of semiconductor lighting and display backlighting. Due to the lack of homogeneous single-crystal materials, device applications of GaN-based materials are usually carried out on heterogeneous substrates, most commonly sapphire (Al 2 o 3 ) substrate, because the sapphire substrate is non-conductive, has high hardness and high price, and the lattice dislocation of GaN grown on sapphire is as high as 13.6%, which is easy to cause lattice defects, which reduces the luminous efficiency of the light-emitting device after growth. Silicon carbide (SiC) substrates have a better lattice matching relationship tha...

AI Technical Summary

Problems solved by technology

Due to the lack of homogeneous single-crystal materials, device applications of GaN-based materials are usually carried out on heterogeneous substrates, most commonly sapphire (Al 2 o 3 ) substrate, because the sapphire substrate is non-conductive, hard, and expensive, and the crystal lattice of GaN grown on sapphire is not allocated as high as 13.6%, which is easy to cause lattice defects, which reduces the luminous efficiency of the light-emitting device after growth

Silicon carbide (SiC) substrates have a better lattice matching relationship than sapphire and gallium nitride, but they are expensive, and the GaN-based light-emitting device technology on it is mastered by individual large companies, so it is difficult to widely commercialize

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