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Aluminum core wire surface silicon plating technology

A technology of wire surface and aluminum core, which is applied in the field of silicon plating on the surface of aluminum core wires, can solve the problems of restricting the application of aluminum core wires, easy oxidation of aluminum core wires, and easy heating of joints, etc., to overcome lattice mismatch and low cost , The effect of less power loss

Inactive Publication Date: 2016-11-16
安徽樵森电气科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the price of the aluminum core wire is cheap, the aluminum core wire is easy to oxidize and reacts with oxygen in the air to quickly form an oxide film. When copper and aluminum are connected, galvanic corrosion will occur, and the joint is prone to heat, which limits the application of the aluminum core wire.
At the same time, the traditional structural design of direct contact between the aluminum core wire and the insulating jacket causes a large electrical loss on the contact section when transmitting electric energy. If the insulating jacket is damaged, electric leakage accidents are likely to occur

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Surface pretreatment: Soak the aluminum conductor in the soaking solution for 10 minutes.

[0025] 2), Cleaning and drying: Clean and dry the surface of the aluminum core wire, the drying temperature is 100°C, and the drying time is 20 minutes;

[0026] 3), sputtering: use aluminum source and nitrogen source to sputter a layer of aluminum nitride layer with a thickness of 5um on the surface of aluminum core wire as a buffer layer by vacuum sputtering method;

[0027] 4) Evaporation: pass the aluminum core wire through the vacuum coating tube at a constant speed, set the evaporation temperature to 420°C, and the pressure to 250 Torr, and simultaneously feed the silicon source and hydrogen into the vacuum coating tube, and the hydrogen will reduce the silicon from the silicon source to Monocrystalline silicon is evaporated on the surface of the aluminum core wire, and the thickness of the coating is 10um by controlling the evaporation time;

[0028] 5), annealing: ann...

Embodiment 2

[0030] 1) Surface pretreatment: Soak the aluminum conductor in the soaking solution for 13 minutes.

[0031] 2), Cleaning and drying: Clean and dry the surface of the aluminum core wire, the drying temperature is 130°C, and the drying time is 25 minutes;

[0032] 3) Sputtering: use aluminum source and nitrogen source to sputter a layer of aluminum nitride layer with a thickness of 7um on the surface of the aluminum core wire as a buffer layer by vacuum sputtering method;

[0033] 4) Evaporation: pass the aluminum core wire through the vacuum coating tube at a constant speed, set the evaporation temperature to 430°C, and the pressure to 275Torr, and at the same time feed the silicon source and hydrogen into the vacuum coating tube, and the hydrogen will reduce the silicon from the silicon source to Monocrystalline silicon is evaporated on the surface of the aluminum core wire, and the thickness of the coating is 13um by controlling the evaporation time;

[0034] 5), annealing:...

Embodiment 3

[0036] 1) Surface pretreatment: soak the aluminum conductor in the soaking solution for 15 minutes.

[0037] 2) Cleaning and drying: Clean and dry the surface of the aluminum core wire, the drying temperature is 150°C, and the drying time is 30 minutes;

[0038] 3) Sputtering: use aluminum source and nitrogen source to sputter a layer of aluminum nitride layer with a thickness of 8um on the surface of the aluminum core wire as a buffer layer by vacuum sputtering method;

[0039] 4) Evaporation: pass the aluminum core wire through the vacuum coating tube at a constant speed, set the evaporation temperature to 450°C, and the pressure to 300 Torr, and at the same time feed the silicon source and hydrogen into the vacuum coating tube, and the hydrogen will reduce the silicon from the silicon source to Monocrystalline silicon is evaporated on the surface of the aluminum core wire, and the thickness of the coating is 15um by controlling the evaporation time;

[0040] 5), annealing:...

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Abstract

The invention discloses an aluminum core wire surface silicon plating technology which comprises the steps of carrying out surface pretreatment, cleaning, drying, sputtering an aluminum nitride layer buffer layer, plating a silicon thin layer on the aluminum nitride layer buffer layer by evaporation, and carrying out annealing in an annealing furnace in a pure nitrogen atmosphere. Through sputtering the aluminum nitride layer buffer layer on the surface of an aluminum core wire, and then plating the silicon thin layer on the aluminum nitride layer buffer layer by evaporation, the aluminum core wire is compatible with the silicon thin layer very well, and the defect that lattices of metallic aluminum and silicon are mismatched is overcome; due to the silicon thin layer, the outer surface of the aluminum core wire is not liable to oxidize; when the aluminum core wire is connected with a copper wire, no electrochemical corrosion is generated, and a heating value is low; in addition, the structural design of the traditional power transmission wire is broken through, and the outer surface of the aluminum core wire is covered with a semiconductor layer and then is wrapped by an insulation layer, so that electric energy loss during power transmission is less, and even if the insulation layer is broken, no electric leakage or electric shock accident occurs. The aluminum core wire surface silicon plating technology has the advantages that the technological processes are simple, the cost is low, and the aluminum core wire surface silicon plating technology is suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of aluminum-core wire preparation, in particular to a silicon-plating process on the surface of an aluminum-core wire. Background technique [0002] Compared with copper core wire, aluminum core wire has the following advantages: [0003] (1) The price of aluminum core wire is cheap: copper rod is 3.5 times the price of aluminum rod, and the proportion of copper is 3.3 times that of aluminum, so aluminum core wire is much cheaper than copper core wire, suitable for low-cost projects or temporary electricity. [0004] (2) Light weight of the aluminum core wire: the weight of the aluminum core wire is 40% of that of the copper core wire, and the construction and transportation costs are low. [0005] Although the price of the aluminum core wire is cheap, the aluminum core wire is easy to oxidize and reacts with oxygen in the air to quickly form an oxide film. When copper and aluminum are connected, galvanic c...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34C23C14/02C23C16/24C23C16/56C23C28/04C23G1/12
CPCC23C14/021C23C14/0617C23C14/34C23C16/0272C23C16/24C23C16/56C23C28/04C23G1/125
Inventor 王波王运安
Owner 安徽樵森电气科技股份有限公司
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