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A Complementary Metal Oxide Semiconductor Time Delay Integral Sensor

An oxide semiconductor and time-delay technology, which is applied in the direction of TV, color TV parts, TV system parts, etc., can solve the problem of reducing the service life and achieve the effect of avoiding X-ray radiation damage

Active Publication Date: 2016-06-08
X SCAN IMAGING CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This cumulative radiation exposure of the CCD sensor under X-rays increases its dark current, shifts its well potential, and thus reduces its useful life

Method used

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  • A Complementary Metal Oxide Semiconductor Time Delay Integral Sensor
  • A Complementary Metal Oxide Semiconductor Time Delay Integral Sensor
  • A Complementary Metal Oxide Semiconductor Time Delay Integral Sensor

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Embodiment Construction

[0023] Figure 1 to Figure 4 A preferred embodiment of the present invention will be described. figure 1 A circuit diagram of a time delay and integrate (TDI) stage 100 is shown. figure 2 A circuit diagram showing a pixel of a linear detector with N time delay and integration stages. For an M pixel array, it includes M rows of circuits, as in figure 2 displayed in . image 3 Block diagram showing the correlated double sample and hold difference amplifier for reading the signal at the final time delay and integration stage. Figure 4 Timing diagrams are shown for operating time-delayed and integrating sensors.

[0024] as in figure 1As shown in , each time delay and integration stage 100 includes: a photodiode 101 , a summing capacitor 102 , an integrating and summing amplifier 103 , and a correlated double sampling and holding circuit 104 . The integrating and summing amplifier 103 includes: an amplifier A1, an integrating capacitor C1, and a reset switch SW1. An inte...

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Abstract

The invention discloses a Complementary Metal Oxide Semiconductor (CMOS) time delay and integration (TDI) image sensor composed of M pixels. Each pixel is formed by a row of N time delay and integration stages. Each time delay and integration stage includes: a photodiode, which collects the photocharge; and a preamplifier, which proportionally converts the photocharge into a voltage. Each time delay and integration stage also includes a set of capacitors, amplifiers, and switches to store the integrated signal voltage, while correlated double sample and hold (CDS) techniques (real or pseudo) maintain the optical signal and reset the voltage simultaneously. This CMOS time-delay and integration structure is particularly beneficial for implementing X-ray scanning detector systems that require large pixel size and signal processing circuitry and allows the signal processing circuitry to be physically separated from the photodiode array for shielding Signal circuits are protected from radiation damage from X-rays.

Description

technical field [0001] The present invention relates to the field of solid state image sensors, and more particularly to a complementary metal oxide semiconductor (CMOS) time delay and integration (TDI) sensor for X-ray image scanning applications. Background technique [0002] The present invention relates to time-delay and integration (TDI) complementary metal-oxide-semiconductor (CMOS) linear image sensors suitable for high-speed X-ray image scanning applications. Typically time-delay and integrating image sensors are used in high-speed line scan applications where the integrating input light signal is very low. In normal line scan applications, one way to increase the integration of the input light signal is to reduce the scan speed and thus increase the integration time. This time delay and integrating sensor allows line scan detector systems to increase the light signal without sacrificing scan rate. This time delay and integration sensor uses a charge transfer devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/378H04N25/00
CPCH04N25/768H04N23/30
Inventor 王勤立李世祖
Owner X SCAN IMAGING CORP
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