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Method for preparing high energy density capacitor

A technology with high energy density and capacitors, applied in capacitors, fixed capacitors, circuits, etc., can solve the problems of inability to store energy and small size of nanocapacitor arrays, and achieve the effects of easy operation, high energy density, and reasonable and simple preparation methods

Inactive Publication Date: 2012-08-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, there are still many key issues to be solved in the preparation of nanocapacitors and arrays. Nanocapacitor arrays are too small to store much energy. At the same time, there are certain problems in the interconnection of multiple array structures. Normal work is subject to further study

Method used

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  • Method for preparing high energy density capacitor
  • Method for preparing high energy density capacitor

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Embodiment 1

[0035] exist figure 1In the process, the flexible porous polycarbonate matrix material 1 is subjected to surface plasma treatment, the porous polycarbonate matrix material treated by surface plasma is placed in the cavity of the vacuum deposition equipment, and the vacuum deposition method is used to deposit the polycarbonate pores ( figure 1 2) Preparation of metal nano-films such as Au ( figure 1 Middle 3) as an electrode of the capacitor.

[0036] The porous polycarbonate matrix material deposited with the Au electrode film is placed in the chamber of the atomic film deposition equipment, and the atomic deposition method is used to deposit Al on the surface of the Au film. 2 o 3 and other dielectric nanofilms ( figure 1 Medium 4).

[0037] Use the atomic deposition method to continue to deposit TiN and other metal nano-films on the surface of dielectric nano-films as electrodes ( figure 1 5) to obtain a metal-insulator-metal nanocapacitor structure in the porous nanost...

Embodiment 2

[0045] Such as figure 1 , the capacitor dielectric nano-film is HfO 2 .

[0046] The fabrication process of the nanocapacitor is similar to Embodiment 1. A porous nanostructure-based Au-HfO 2 - High energy density nanocapacitor structure of TiN.

Embodiment 3

[0048] Such as figure 1 , the capacitor dielectric nano-film is HfO 2 .

[0049] The two electrode materials of the nanocapacitor are Al and TiN respectively, and the preparation process is similar to the first embodiment. Thus, a porous nanostructure based Al-HfO 2 - High energy density nanocapacitor structure of TiN.

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Abstract

The invention discloses a method for preparing a high energy density capacitor. The method comprises the following steps of: preparing a metal film in a porous polycarbonate material by using a vacuum deposition method; preparing a nano dielectric film serving as a capacitor dielectric material on the surface of the metal film by using an atomic layer deposition method; and preparing a nanofilm serving as an electrode on the dielectric film by using the atomic layer deposition method to obtain the metal-insulator-metal nano capacitor structure. The capacitor prepared by the method has a nanofilm structure, so that the capacitor has high energy density; meanwhile, the capacitor preparation technology overcomes defects of the prior art, and the preparation method is reasonable, simple, and easy to implement.

Description

technical field [0001] The invention relates to the field of electronic material elements, in particular to a method for preparing a high energy density nanocapacitor based on a porous structure with a large length / diameter ratio. Background technique [0002] With the development of nanotechnology in the past 10 years, various new nanomaterials such as: carbon nanotubes, graphene and other novel electronic materials have been applied to high-performance energy storage devices, because such nanomaterials have a large specific surface area and high surface and interfacial activity, the performance of energy storage capacitors (especially supercapacitors) has been greatly improved through the ultra-thin interface structure and the miniaturization of the device structure. Energy storage capacitors provide important technical support. [0003] At present, the demand for micro / nano-scale energy storage devices in the next generation of energy storage systems is becoming more and...

Claims

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Application Information

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IPC IPC(8): H01G4/00
Inventor 杨亚杰蒋亚东徐建华杨文耀
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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