Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Common-source operational amplifier and manufacture method for same

A technology of operational amplifiers and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing the frequency response characteristics of common-source operational amplifiers, and achieve the effect of improving frequency characteristics

Inactive Publication Date: 2012-08-01
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Between the output terminal and the input terminal, due to the parasitic overlap capacitance (C gd )23, forming a feedback capacitor, due to the Miller effect, the parasitic overlap capacitor 23 will seriously degrade the frequency response characteristics of the common source operational amplifier

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Common-source operational amplifier and manufacture method for same
  • Common-source operational amplifier and manufacture method for same
  • Common-source operational amplifier and manufacture method for same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0019] Please refer to Figure 4A-4F , taking the preparation of NMOS devices in a common-source operational amplifier as an example, the manufacturing method of the common-source operational amplifier includes:

[0020] First, if Figure 4A As shown, a gate structure 42 is formed on a substrate 41. The substrate 41 includes a source region and a drain region. The source region refers to the source extension region and the source heavily doped region to be formed later. region, similarly, the drain region refers to the region where the drain extension region and the heavily doped drain region will be formed subsequently;

[0021] Then, if Figure 4B As shown, the gate structure 42 is used as a mask, and the substrate 41 on both side...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a common-source operational amplifier and a manufacture method for the same. A mask layer is used for covering a spacer deposition layer above a drain area and neutral ions are used for ion injection of a spacer deposition layer above a source area, so that etching of the spacer deposition layer above the source area in spacer etching process is rapider than etching of the spacer deposition layer above the drain area, and the section width of a source spacer after etching is smaller while the section width of a drain spacer is larger; and after source-drain heavy doping injection and annealing process, doped ions of a source heavily doped area are nearer to a channel, and the doped ions of a drain heavily doped area are farther to the channel, so that frequency characteristics of the common-source operational amplifier are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a common-source operational amplifier and a manufacturing method thereof. Background technique [0002] CMOS (Complementary Metal Oxide Semiconductor) operational amplifier is one of the basic units of various circuits. With the development of information technology, the requirements for the processing speed of information data are getting higher and higher, and the requirements for the frequency response characteristics of the CMOS operational amplifiers used in it are also getting higher and higher. However, the parasitic capacitance of CMOS devices plays an increasingly negative role with the increase of operating frequency. How to reduce the influence of these parasitic capacitances on CMOS operational amplifiers has become the key to improving the frequency response characteristics of CMOS operational amplifiers. [0003] Miller capacitance is an equivalent capaci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/08H01L21/336H01L21/3105H01L21/311
CPCH01L29/7835H01L29/66659
Inventor 俞柳江
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com