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Infrared remote control receiver amplifier with double-layer structure

An infrared remote control, double-layer structure technology, applied in the direction of instruments, electric solid state devices, semiconductor devices, etc., can solve the problems of complete shielding, poor anti-interference ability of analog IC chips, and reduced stability and reliability of infrared remote control receiving amplifiers. Achieve the effects of extending the receiving distance, improving the shielding effect, and improving the anti-interference performance

Active Publication Date: 2014-10-15
XIAMEN HUALIAN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the infrared remote control receiving amplifier processed by traditional technology, since the analog IC chip and the photosensitive chip are mounted on the same lead frame, the product length is the sum of the lengths of the two chips plus the minimum distance between the two, so There are limitations to reducing the external size of the infrared remote control receiver amplifier
[0003] Furthermore, due to the poor anti-interference ability of analog IC chips, and due to the rapid development and popularization of radio, television, microwave, communication and other technologies, the power of radio frequency equipment has doubled, making the space full of various electromagnetic interference; The stability and reliability of the infrared remote control receiving amplifier are greatly reduced, so the existing infrared remote control receiving amplifier needs to shield the analog IC chip in terms of anti-electromagnetic interference
However, the analog IC chip and the photosensitive chip of the existing infrared remote control receiving amplifier products are mounted and bonded on the same plane of the lead frame, the photosensitive chip needs to receive infrared signals, and the analog IC chip needs to be shielded
For infrared remote control receiving amplifiers with discrete internal shielding structures that are widely used at present, it is necessary to fold up the side of the lead frame to form a fulcrum, and then cover a shielding cover, so that the analog IC chip also has up to 4 sides for shielding, and the top And the bottom also needs to be left blank, and in order to make the photosensitive chip receive infrared signals normally, the shielding cover of the infrared remote control receiving amplifier needs to open a light-transmitting window, so it is impossible to completely shield the analog IC chip

Method used

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  • Infrared remote control receiver amplifier with double-layer structure
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  • Infrared remote control receiver amplifier with double-layer structure

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Embodiment Construction

[0020] The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.

[0021] refer to Figure 1 to Figure 6 As shown, the infrared remote control receiving amplifier with double-layer structure includes an analog IC chip 11, a photosensitive chip 21 and a package body 3, and the amplifier also includes a lower lead frame 1 and an upper lead frame 2, and the analog IC chip 11 is fixed on the lower lead frame 1, the photosensitive chip 21 is fixed on the upper lead frame 2, the output end of the photosensitive chip 21 is connected with the upper lead frame 2, and the input end of the analog IC chip 11 is connected to the upper lead frame 2. The lower lead frame 1 is connected, and the lower lead frame 1 and the upper lead frame 2 are fixed by welding or riveting or silver glue connection, so as to realize the electrical connection between the photosensitive chip 21 and the analog IC chip 11; The lower lead frame 1 carri...

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Abstract

The invention relates to the technical field of combining integrated circuits and optoelectronics in electronic components, in particular to an infrared remote control receiving amplifier with a double-layer structure. An infrared remote control receiving amplifier with a double-layer structure includes a photosensitive chip, an analog IC chip and a package body, the amplifier also includes a lower lead frame and an upper lead frame, and the analog IC chip is fixed on the lower lead frame, the photosensitive chip is fixed on the upper lead frame, and the photosensitive chip is electrically connected to the analog IC chip; the upper and lower lead frames electromagnetically shield the analog IC chip; the package is coated on the photosensitive chip, Simulate IC chips and upper and lower lead frames. The infrared remote control receiving amplifier with a double-layer structure of the present invention has a good shielding effect, greatly prolongs the receiving distance of the product, increases the anti-interference performance, and can be made very small at the same time, which conforms to the trend of miniaturization of electronic components.

Description

technical field [0001] The invention relates to the technical field of combining integrated circuits and optoelectronics in electronic components, in particular to an infrared remote control receiving amplifier with a double-layer structure. Background technique [0002] Infrared remote control technology is a technology that uses infrared rays for point-to-point communication. Infrared rays are outside visible light in the spectrum, so they have strong anti-interference and have the characteristics of straight-line propagation of light waves, which are not easy to cause mutual interference. It is a good information transmission medium . The use of infrared remote control technology has the characteristics of no signal interference, high transmission accuracy, small size, low power, and low cost. Therefore, it is widely used in various electronic fields, especially in the field of home appliances such as color TVs, DVDs, air conditioners, etc. universal. With the rapid de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H01L23/495H01L23/31H01L23/552G08C23/04
CPCH01L24/34H01L2924/181H01L2224/34H01L2924/00014H01L2924/00012H01L2224/37099H01L2224/37599H01L2224/84
Inventor 陈巍兰玉平
Owner XIAMEN HUALIAN ELECTRONICS CO LTD
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