Infrared remote control receiver amplifier with double-layer structure
An infrared remote control, double-layer structure technology, applied in the direction of instruments, electric solid state devices, semiconductor devices, etc., can solve the problems of complete shielding, poor anti-interference ability of analog IC chips, and reduced stability and reliability of infrared remote control receiving amplifiers. Achieve the effects of extending the receiving distance, improving the shielding effect, and improving the anti-interference performance
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[0020] The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.
[0021] refer to Figure 1 to Figure 6 As shown, the infrared remote control receiving amplifier with double-layer structure includes an analog IC chip 11, a photosensitive chip 21 and a package body 3, and the amplifier also includes a lower lead frame 1 and an upper lead frame 2, and the analog IC chip 11 is fixed on the lower lead frame 1, the photosensitive chip 21 is fixed on the upper lead frame 2, the output end of the photosensitive chip 21 is connected with the upper lead frame 2, and the input end of the analog IC chip 11 is connected to the upper lead frame 2. The lower lead frame 1 is connected, and the lower lead frame 1 and the upper lead frame 2 are fixed by welding or riveting or silver glue connection, so as to realize the electrical connection between the photosensitive chip 21 and the analog IC chip 11; The lower lead frame 1 carri...
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