Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure

A technology of micro-nano pyramids and light-emitting diodes, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve the problems of large reverse leakage and low yield

Inactive Publication Date: 2012-09-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Large reverse leakage and low yield are the main bottlenecks i

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  • Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure
  • Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure
  • Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure

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[0035] Example

[0036] See Figure 1 to Figure 5 As shown, the present invention provides a method for fabricating a micro-nano pyramidal gallium nitride-based vertical structure light-emitting diode array, which includes the following steps:

[0037] Step 1: Select an epitaxial structure 10, which includes a sapphire substrate 11 and a gallium nitride LED layer 12 in sequence. The gallium nitride LED layer 12 includes an unintentionally doped gallium nitride layer 1 (2 μm), an N-type gallium nitride layer 2 (2 μm), a quantum well layer 3 (100 nm), and a p-type gallium nitride layer 4 (100 nm);

[0038] Step 2: Depositing a metal layer 20 on the p-type gallium nitride layer 4, the metal layer 20 being a Ni\Ag\Pt\Au multilayer metal;

[0039] Step 3: Electroplating Cu\Ni multilayer metal on the metal layer 20 by electroplating method to form a substrate

[0040] Step 4: Use a laser lift-off method to separate the sapphire substrate 11 from the epitaxial layer 12;

[0041] Step 5: The s...

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Abstract

The invention provides a method for manufacturing a micro-nano pyramid gallium nitride based light-emitting diode array with a vertical structure. The method comprises the following steps of: selecting an epitaxial structure, wherein the epitaxial structure comprises a sapphire substrate and a gallium nitride LED (Light-Emitting Diode) layer; the gallium nitride LED layer comprises an un-designed doped gallium nitride layer, an N-type gallium nitride layer, a quantum well layer and a p-type gallium nitride layer; depositing a metal layer on the p-type gallium nitride layer; transferring an epitaxial structure and the metal layer on the substrate to form a base sheet; separating the sapphire substrate in the epitaxial structure from the epitaxial structure by utilizing a laser stripping method; putting the base sheet into a solution to be corroded and forming a fragmented micro-nano pyramid structure on one face of the un-designed doped gallium nitride layer of the gallium nitride LED layer of the epitaxial structure; coating silica gel on the surface of the micro-nano pyramid structure; removing the silica gel at the tip of the micro-nano pyramid structure by utilizing a plasma technology and keeping the silica gel at the bottom of the micro-nano pyramid structure; depositing a transparent conductive layer on the surface of the micro-nano pyramid structure; and depositing an image metal electrode on the transparent conductive layer through a photoetching method so as to finish the preparation.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a micro-nano pyramid gallium nitride-based vertical structure light-emitting diode array. Background technique [0002] The device structure of GaN-based LEDs has mainly gone through three main stages: front-mount structure, flip-chip structure, and vertical structure, which is currently widely valued internationally. Essentially, the first two device structures—the flip-chip structure and the front-mount structure—neither get rid of the shackles of the sapphire substrate on the device structure design. Since 2004, the vertical structure has attracted widespread attention. The vertical structure transfers the GaN epitaxial structure from sapphire to Cu, Si and other materials with good electrical and thermal conductivity characteristics through thermocompression bonding or electroplating, laser lift-off (LLO) and other processes. On the substrat...

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Application Information

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IPC IPC(8): H01L33/00
Inventor 汪炼成马骏刘志强伊晓燕王国宏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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