Production method of ingot single crystal
A production method and ingot casting technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low measurement accuracy, manual measurement of quartz rods, and high cost
Active Publication Date: 2015-05-06
TRINA SOLAR CO LTD
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Problems solved by technology
[0008] The technical problem to be solved by the present invention is: to provide a single crystal ingot production method, which overcomes the defects of low indirect measurement accuracy of thermocouples, manual measurement of quartz rods, high cost and high risk
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Embodiment 1
[0026] The square root of the (100) crystalline silicon rod obtained by the Czochralski method was obtained to obtain a square seed crystal 4 with a size of 156×156 mm and a thickness of 20 mm.
[0027] A standard GT450 quartz crucible 3 is used, and the thickness of the bottom plate 5 is 2 cm. 25 square seed crystals 4 are densely arranged at the center of the bottom of the crucible, and then boron dopant and other polysilicon materials are added, with a total feeding amount of 430 kg.
[0028] Place the crucible filled with silicon material in the ingot furnace GT450HP, the side of the quartz crucible 3 is the crucible guard plate 6, and place the high temperature resistant eddy current sensor 1 at a place 4.2cm away from the outer surface of the side wall of the quartz crucible 3 from the upper surface of the graphite bottom plate 5 , the detection height of the eddy current sensor 1 is 1cm.
[0029] Close the furnace chamber, evacuate, and heat. When the temperature of the...
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Abstract
The invention relates to a production method of ingot single crystal. A high-temperature-resistant eddy current sensor mounted on the lateral wall of a crucible is used to detect a solid-liquid interface of melting silicon during ingot production, and an ingot furnace is controlled to proceed from a melting phase to a crystal growth phase. The production method includes the steps of firstly, preparing devices, namely mounting the high-temperature-resistant eddy current sensor on the lateral wall of the crucible above a seed crystal plane, and keeping a distance from the center of the eddy current sensor to the seed crystal plane to be half to one third of height of a detection area for the eddy current sensor; secondly, charging; thirdly, melting; fourthly, continuously measuring resistivity of the eddy current sensor, and controlling the ingot furnace to proceed from the melting phase to the crystal growth phase when the measured resistivity reaches jump alarm set value; fifthly allowing for crystal growth, annealing, cooling and taking ingot single crystal out of the furnace, wherein the jump alarm set value is set at from 1000 omega*m to 9 omega*m. By the production method, seed crystal residue height in production and melting of the ingot single crystal is controlled to a target value + / -1mm.
Description
technical field [0001] The invention relates to a production method of ingot single crystal. Background technique [0002] In the photovoltaic industry, high photoelectric conversion efficiency and low cost have been pursued by various photovoltaic companies. Crystalline silicon is currently the most important solar cell material, and its cells have high photoelectric conversion efficiency. Solar crystalline silicon mainly includes Czochralski (CZ) monocrystalline silicon and ingot-cast polycrystalline silicon. [0003] The monocrystalline silicon obtained by the Czochralski method has the characteristics of low defect density and high photoelectric conversion efficiency, especially the application of alkali texturing cell technology, which makes the surface form a regular pyramid texture, which improves the surface light absorption, thereby greatly improving the photoelectricity. conversion efficiency. However, the Czochralski method has disadvantages such as low yield an...
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IPC IPC(8): C30B11/00C30B29/06
Inventor 叶宏亮陈雪黄振飞
Owner TRINA SOLAR CO LTD