MOS (Metal Oxide Semiconductor) transistor structure integrated with resistive random access memory and manufacturing method of MOS transistor structure

Abstract

The invention belongs to the technical field of semiconductor memories and more particularly relates to an MOS (Metal Oxide Semiconductor) transistor structure integrated with a resistive random access memory and a manufacturing method of the MOS transistor structure. The MOS transistor structure integrated with the resistive random access memory, provided by the invention, comprises an MOS transistor and the resistive random access memory which are formed on a substrate, wherein a gate dielectric layer of the MOS transistor extends onto the surface of a drain region of the MOS transistor, and a resistive random access memory layer of the resistive random access memory is formed on the gate dielectric layer part which extends onto the surface of the drain region of the MOS transistor. According to the invention, the high-quality gate dielectric layer of the MOS transistor and the resistive random access memory layer of the resistive random access memory are obtained by a primary atomic layer deposition process, the resistive random access memory and the MOS transistor are integrated together, and the process steps are simple; and in addition, the manufacturing method can be compatible with a shallow trench isolation process, or a field oxide layer isolation process and a source / drain ion implantation or diffusion process and is convenient for process integration.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a field-effect transistor structure of an integrated resistive variable memory and a manufacturing method thereof. Background technique [0002] The information reading and writing of the resistive variable memory is realized by reading or changing the resistance of the resistive variable material. The resistance value of the RRAM can have two different states of a high resistance state and a low resistance state under the action of an applied voltage, which can be used to represent two states of "0" and "1" respectively. Under different applied voltage conditions, the resistance value of the RRAM can be reversibly switched between a high-resistance state and a low-resistance state, so as to realize information storage. Resistive memory has the advantages of simple preparation, high storage density, low operating voltage, fast read and write speed, long ...

AI Technical Summary

Problems solved by technology

[0004] As mentioned above, the integrated structure of RRAM and MOS transistors is complicated, which is not conducive to the process integration of devices and the development of devices in the direction of miniaturization.

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