Method for preparing p-type zinc oxide material

Abstract

The invention provides a method for a preparing p-type zinc oxide material. The method includes the following steps of preparing high-quality monocrystalline or film containing high-concentration zinc holes in the strongly-oxidizing atmosphere; filling monovalent atoms into the zinc holes in a dispersing manner by annealing in reduction atmosphere, and simultaneously achieving two purposes of generating and stabilizing shallow-energy-level acceptors and complete crystal lattice to improve migration rate; and removing the monovalent atoms in surplus gaps so as to eliminate unstable shallow donors in the material by annealing in the weak-oxidizing atmosphere again. The method is capable of obtaining the p-type zinc oxide material high in hole concentration and stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material growth and device preparation, and particularly relates to a method for exploring or realizing the doping of p-type ZnO materials. The method is controlled by multi-step thermodynamic conditions to prepare p-type oxides with high mobility and high thermal stability. Zinc material. Background technique [0002] Zinc oxide (ZnO) semiconductor has excellent characteristics such as wide direct band gap, large exciton binding energy and wet chemical etching, and is widely used in the field of photoelectric conversion materials and devices for new energy, such as ultraviolet light-emitting diodes (LEDs) and laser diodes. (LD) and ultraviolet detectors have broad application prospects. At present, the main problem restricting the development of ZnO-based optoelectronic devices is that it is difficult to obtain p-type ZnO materials with high carrier concentration, high thermal stability an...

AI Technical Summary

Problems solved by technology

[0006] In terms of how to achieve high mobility of materials, there are fewer current studies. From these current studies, it can be seen that the current research on p-type ZnO is aimed at how to improve the carrier concentration, thermal stability and mobility. This topic has been carried out, and no researchers have considered how to find a suitable method to achieve the above three key indicators at the same time.