Etching-first and packaging-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit

Abstract

The invention relates to an etching-first and packaging-later manufacturing method for a chip formal double-surface three-dimensional circuit and a packaging structure of the chip formal double-surface three-dimensional circuit. The method comprises the following steps of taking a metal substrate; pre-plating copper on the surface of the metal substrate; carrying out the operation of pasting a photo-resisting film; removing a part of the photo-resisting film from the back surface of the metal substrate; electro-plating an inert metal circuit layer; electro-plating a metal circuit layer; removing the photo-resisting film; packaging; tapping on the surface of the plastic package material; digging a groove; electro-plating an electric conduction metal; pre-processing of metallization; electro-plating the metal circuit layer; chemical-etching; electro-plating the metal circuit layer; coating bonding materials; installing a chip; bonding with metal wires; cleaning; implanting a metal ball; and cutting a finished product. The method disclosed by the invention has the beneficial effects that the manufacturing cost is lowered, the safety and the reliability of a packaged body are increased, the environment pollution is reduced, and the design and the manufacturing of a high-density circuit can be really realized.

Description

technical field [0001] The invention relates to a manufacturing method and packaging structure of a double-sided three-dimensional circuit chip. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 127 , take a substrate made of glass fiber material, [0004] Step two, see Figure 128 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 129 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 130 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 131 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 132 , coated with a photoresist film on the surface of the glass f...

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Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 139 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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