Composite medium film material based on polyvinylidene fluoride and graphene, and preparation method thereof

A technology of polyvinylidene fluoride and composite media, applied in chemical instruments and methods, synthetic resin layered products, layered products, etc., to achieve low cost, maintain flexibility and ease of processing, and simple preparation methods

Inactive Publication Date: 2012-10-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since there is currently no single-component dielectric material that has both excellent mechanical and processability under the premise of having a sufficiently high dielectric constant

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] First, take 1.99g polyvinylidene fluoride powder and dissolve it in an organic solvent (concentration not exceeding 5%) and sonicate for 1 hour in the temperature range of 20-100°C, so that polyvinylidene fluoride is fully dissolved in the solvent to obtain system A; then take Slowly dissolve 0.01g of graphene powder in system A, and keep stirring, continue to ultrasonicate at 20-100°C for 1-10 hours to obtain system B; then use ultrasonic atomization process to spray system B on the substrate surface; finally, dry the system B sprayed on the surface of the substrate (temperature is 40~100°C, time is 2~5 hours), remove the organic solvent, and obtain a composite dielectric film material based on polyvinylidene fluoride and graphene , wherein the mass percent content of graphene is 0.5% of the mass of the composite dielectric film, which is recorded as sample one.

Embodiment 2

[0016] First, take 1.98g of polyvinylidene fluoride powder and dissolve it in an organic solvent (concentration not exceeding 5%), and ultrasonicate for 1 hour at a temperature of 20-100°C, so that the polyvinylidene fluoride is fully dissolved in the solvent to obtain system A; then take Slowly dissolve 0.02g of graphene powder in system A, keep stirring, and continue ultrasonication at 20-100°C for 1-10 hours to obtain system B; then use ultrasonic atomization process to spray system B on the substrate surface; finally, dry the system B sprayed on the surface of the substrate (temperature is 40~100°C, time is 2~5 hours), remove the organic solvent, and obtain a composite dielectric film material based on polyvinylidene fluoride and graphene , wherein the mass percent content of graphene is 1.0% of the mass of the composite dielectric film, which is recorded as sample two.

Embodiment 3

[0018] First, dissolve 1.97g of polyvinylidene fluoride powder in an organic solvent (concentration not exceeding 5%) and ultrasonicate for 1 hour at a temperature of 20-100°C, so that the polyvinylidene fluoride is fully dissolved in the solvent to obtain system A; then take 0.03 g graphene powder is slowly dissolved in system A, and continuously stirred, and continues to be ultrasonicated at 20-100°C for 1-10 hours to obtain system B; then use ultrasonic atomization process to spray system B on the surface of the substrate ; Finally, dry the system B sprayed on the surface of the substrate (at a temperature of 40-100°C and for 2-5 hours), remove the organic solvent, and obtain a composite dielectric film material based on polyvinylidene fluoride and graphene, The mass percentage content of graphene is 1.5% of the mass of the composite dielectric film, which is recorded as sample three.

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Abstract

The invention which discloses a composite medium film material based on polyvinylidene fluoride and graphene, and a preparation method thereof belongs to the technical field of electric functional materials. The composite medium film is obtained through compounding polyvinylidene fluoride and graphene, wherein the graphene mass percent content is 0.5-3% of the mass of the composite medium film. The preparation method comprises the following steps: preparing an organic solution (a system A) of polyvinylidene fluoride powder; adding graphene powder to the system A to obtain a system B; spraying the system B on the surface of a substrate through adopting an ultrasonic atomization technology; and drying the system B sprayed on the surface of the substrate to obtain the composite medium film material based on the polyvinylidene fluoride and the graphene. According to the invention, the graphene which approaches and does not exceed a percolation threshold is added to a polyvinylidene fluoride film to obtain the composite medium film material with the dielectric constant 100% higher than that of the pure polyvinylidene fluoride film material, and the original flexibility and the easy processability are maintained; and the preparation method has the advantages of simplicity, easy control and low cost.

Description

technical field [0001] The invention belongs to the technical field of electronic functional materials, and relates to a thin film dielectric material and a preparation method, especially a high dielectric polymer thin film material and a high energy storage thin film material. Background technique [0002] Dielectric materials have the function of storing charge and electric energy, so they are widely used in various electronic power devices, aerospace and military weapons. With the explosive growth of the information industry in the 21st century, especially the increasing requirements for the intensification and miniaturization of various electronic equipment (including devices), so for high dielectric materials (materials with high dielectric constant) Demand is growing. At present, there is no single-component dielectric material that has both excellent mechanical properties and processability under the premise of having a sufficiently high dielectric constant. For exa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B27/30B32B27/20C08L27/16C08K3/04
Inventor 徐建华王偲宇陈燕杨文耀杨亚杰龙菁
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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