A kind of bipolycrystalline planar soi BiCMOS integrated device and its preparation method

Abstract

The invention discloses a double-polysilicon planar SOI BiCMOS integrated device and a preparation method. The preparation method growing N-Si on a SOI substrate as the collector region of a bipolar device, etching a base region by lithography, growing P-SiGe, i-Si and i-Poly-Si on the base region, preparing deep trench isolation, and preparing an emitter, a base and a collector to obtain a SiGe HBT (heterojunction bipolar transistor) device; etching a trench on the active region of an NMOS (n-channel metal oxide semiconductor) device by lithography, and growing four material layers in the trench; etching a trench on the active region of a PMOS (p-channel metal oxide semiconductor) device, growing three material layers in the trench, and preparing a drain and a gate on the active region of MOS (metal oxide semiconductor) to obtain an MOS device; and etching leads by lithography to obtain the double-polysilicon planar SOI BiCMOS integrated device and circuit. According to the invention, the double-polysilicon planar SOI BiCMOS integrated circuit prepared by the method is enhanced in performance by fully utilizing the characteristics that the electron mobility of a tensile strained Si material is higher than that of a bulk Si material and that the hole mobility of a compressive strained SiGe material is higher than that of the bulk Si material.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular prepares a double-polycrystalline planar SOI BiCMOS integrated device and a preparation method. Background technique [0002] Integrated circuits are the cornerstone and core of the economic development of an information society. Just as the American engineering and technology circle recently named the fifth electronic technology among the 20 greatest engineering and technological achievements in the world in the 20th century, "from vacuum tubes to semiconductors and integrated circuits, they have become the cornerstone of intelligent work in various industries today." Integrated circuits. It is one of the typical products that can best reflect the characteristics of knowledge economy. At present, the electronic information industry based on integrated circuits has become the world's largest industry. With the development of integrated circuit technol...

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Problems solved by technology

Although GaAs and InP-based compound devices have superior frequency characteristics, their preparation process is more complicated than Si process, high cost, difficult to prepare large-diameter single crystal, low mechanical strength, poor heat dissipation performance, incompatibility with Si process and lack of SiO 2 Such passivation layer and other factors limit its wide application and development.

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