Waveguide mode-locked laser

A mode-locked laser and waveguide grating technology, applied in the field of lasers, can solve the problems of reducing the high integration of waveguide mode-locked lasers and technical barriers to optical integration, etc.

Inactive Publication Date: 2012-10-17
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The advantage of waveguide mode-locked lasers is that they are highly integrated, which will effectively promote the development of optical integration technology. Unfortunately, the current ultra-short and ultra-fast mode-locked lasers, in addition to the development of circular waveguides such as optical fibers, the current waveguide lasers exist There are many problems with discrete components. For example, only waveguide devices are used as gain media in waveguide lasers, while external solid or fiber devices are used for pumping and other devices, which greatly reduces the high integration of waveguide mode-locked lasers. , also set obstacles for the development of optical integration technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Waveguide mode-locked laser
  • Waveguide mode-locked laser
  • Waveguide mode-locked laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] see figure 1 , the waveguide mode-locked laser of the present invention is mainly composed of 4 parts, a semiconductor saturable absorbing mirror 1, a waveguide gain medium 2, a waveguide grating 3, a laser diode array pump source 4; a semiconductor saturable absorbing mirror 1 and a waveguide grating 3 are respectively arranged at both ends of the waveguide gain medium 2, and the laser diode array pump source 4 is arranged on the waveguide grating. The semiconductor saturable absorbing mirror 1 is fixed to the output end of the waveguide gain medium 2 through a precision control platform, and the semiconductor saturable absorbing mirror 1 is fixed with special glue, thereby realizing the saturable absorbing mirror 1 It is integrated with the waveguide to meet the structure of the whole waveguide.

[0020] see figure 2 , image 3 , the waveguide gain medium 2 is a piece of doped material with a thickness of 220 μm, a width of 11 mm, and a length of 60 mm. The bottom...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a waveguide mode-locked laser, comprising a semiconductor saturable absorption mirror, a waveguide grain medium, a waveguide grating and a pumping source. The semiconductor saturable absorption mirror and the waveguide grating are respectively arranged at the both ends of the waveguide grain medium; and the pumping source is arranged above the waveguide grating. According to the waveguide mode-locked laser provided by the invention, the semiconductor saturable absorption mirror is fixedly arranged at one end of the grain medium by using a special means as a cavity mirror in a laser cavity; and furthermore, the grating is written into a waveguide channel on a doped substrate in a point-to-point manner by using a femtosecond micromachining system, and the passive mode locking is realized by utilizing dispersion compensation of the grating and characteristics of the semiconductor saturable absorption mirror.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a picosecond passive mode-locked laser based on a full waveguide structure in which the waveguide is the gain medium. Background technique [0002] With the development of laser technology and optical waveguide technology, the development of integrated optics has been effectively promoted, and a certain foundation has been laid for the production of optical integrated chips. Due to its poor stability, the light source is difficult to couple with the optical fiber. The optical fiber source is relatively large in the optical integrated device, and it is difficult to adapt to the development of optical integrated devices, let alone the production of optical integrated chips. In 2002, J.R.Lee's research group pumped the Nd:YAG gain medium with a length of 60 mm, a width of 11 mm and a thickness of 200 μm by using a semiconductor laser array to obtain an output of 150 W. signal light,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/063
Inventor 赵卫程光华白晶惠荣庆王屹山
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products