Waveguide mode-locked laser

A mode-locked laser and waveguide grating technology, applied in the field of lasers, can solve the problems of reducing the high integration of waveguide mode-locked lasers and technical barriers to optical integration, etc.
CN102738693AInactive Publication Date: 2012-10-17XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Publication Date
2012-10-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a waveguide mode-locked laser, comprising a semiconductor saturable absorption mirror, a waveguide grain medium, a waveguide grating and a pumping source. The semiconductor saturable absorption mirror and the waveguide grating are respectively arranged at the both ends of the waveguide grain medium; and the pumping source is arranged above the waveguide grating. According to the waveguide mode-locked laser provided by the invention, the semiconductor saturable absorption mirror is fixedly arranged at one end of the grain medium by using a special means as a cavity mirror in a laser cavity; and furthermore, the grating is written into a waveguide channel on a doped substrate in a point-to-point manner by using a femtosecond micromachining system, and the passive mode locking is realized by utilizing dispersion compensation of the grating and characteristics of the semiconductor saturable absorption mirror.
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Description

technical field

[0001] The invention relates to the field of laser technology, in particular to a picosecond passive mode-locked laser based on a full waveguide structure in which the waveguide is the gain medium. Background technique

[0002] With the development of laser technology and optical waveguide technology, the development of integrated optics has been effectively promoted, and a certain foundation has been laid for the production of optical integrated chips. Due to its poor stability, the light source is difficult to couple with the optical fiber. The optical fiber source is relatively large in the optical integrated device, and it is difficult to adapt to the development of optical integrated devices, let alone the production of optical integrated chips. In 2002, J.R.Lee's research group pumped the Nd:YAG gain medium with a length of 60 mm, a width of 11 mm and a thickness of 200 μm by using a semiconductor laser array to obtain an output of 150 W. signal light,...

Claims

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