Luminescent film, preparation method thereof, and application thereof
A technology of luminescent film and zinc oxide film, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of low luminous efficiency of luminescent film, and achieve the effects of low cost, improved luminous efficiency, and simple operation
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[0028] The embodiment of the present invention further provides the method for preparing the above-mentioned luminescent film, including the following steps:
[0029] Step S01, preparing a sputtering target:
[0030] Mix zinc oxide, divalent europium oxide and lithium oxide to obtain a mixture, the mass percentage of divalent europium oxide in the mixture is 0.5-5%, and the mass percentage of lithium oxide is 0.1-3%, and the mixture Sintering to form a sputtering target;
[0031] Step S02, sputtering treatment:
[0032] The sputtering target is under the condition that the base-target distance is 50-90mm, the substrate temperature is 300-600℃, the working gas is a mixture of hydrogen and inert gas, the gas flow rate is 15-30sccm, and the pressure is 0.2-4.5Pa. The material is sputtered to obtain the precursor of the luminescent film;
[0033] Step S03, annealing:
[0034] The light-emitting film precursor is annealed in a vacuum environment at a temperature of 500-800° C. ...
Embodiment 1
[0046] Mix zinc oxide, divalent europium oxide and lithium oxide powders with a purity of 99.99% to obtain a mixture; wherein the mass percentage of ZnO is 98.5%, the mass percentage of EuO is 0.5%, Li 2 The mass percent composition of O is 1%;
[0047] The mixture is sintered at 1200°C into a Φ50×2mm sputtering target;
[0048] Put the sputtering target into the vacuum chamber of the sputtering equipment, then ultrasonically clean the quartz substrate with acetone, absolute ethanol and deionized water successively, dry it with high-purity nitrogen, put it into the vacuum chamber, and place the target The distance between the material and the substrate is set to 60mm, and the vacuum degree of the chamber is pumped to 6.0×10 by mechanical pump and molecular pump. -4 Pa, argon-hydrogen mixed gas with a gas flow rate of 25 sccm is used as the working gas, wherein the hydrogen content is 10%, the pressure is adjusted to 2.0 Pa, the substrate temperature is adjusted to 450 ° C, an...
Embodiment 2
[0051] The preparation method of the luminescent film in this embodiment refers to Example 1, wherein the mass percentage of EuO is 1%, the mass percentage of lithium oxide is 0.1%, the mass percentage of zinc oxide is 98.9%, and the content of hydrogen is 1% %, the substrate temperature during sputtering is 400°C, and the annealing temperature is 700°C; the main luminescent peak position of the luminescent film measured in the PL spectrum is 607nm.
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