Solar-grade mono-crystalline crystal brick surface treatment method
A surface treatment, solar-grade technology, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of single crystal silicon wafer edge jumping, high edge defect rate of single crystal silicon wafers, etc., to reduce bouncing The effect of edge and line mark elimination
Inactive Publication Date: 2012-11-14
镇江荣德新能源科技有限公司
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Problems solved by technology
However, when dealing with line marks on the surface of monocrystalline tiles, a new damaged layer will be formed on the surface of monocrystalline tiles, which will easily lead to defects and defects such as edge jumping on the edge of monocrystalline silicon wafers after slicing, thus making the edge of monocrystalline silicon wafers defective. higher rate
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[0023] Embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0024] figure 1 It is a schematic flow chart of the method for surface treatment of solar grade single crystal bricks of the present invention. Such as figure 1 As shown, the surface treatment method of solar-grade monocrystalline crystal bricks provided by the present invention is carried out according to the following steps:
[0025] Step A: mechanically grinding the surface of the single crystal brick;
[0026] Step B: putting the ground single crystal brick into an alkaline etchant for corrosion, and removing the damaged layer on the surface of the single crystal brick;
[0027] Step C: using an acid to react with the alkali remaining on the surface of the single crystal brick and the generated silicate;
[0028] Step D: cleaning and drying the single crystal bricks.
[0029] In the step A, use a grinding machine to mechanically grind ...
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The invention discloses a solar-grade mono-crystalline crystal brick surface treatment method. The method sequentially comprises the following steps: 1, mechanically grinding surfaces of a mono-crystalline crystal brick; 2, corroding the ground mono-crystalline crystal brick in an alkaline corrosion agent, and removing the damage layers of the surfaces of the mono-crystalline crystal brick; 3, reacting an acid with an alkali residual on the surfaces of the mono-crystalline crystal brick and generated silicate; and 4, cleaning and drying the mono-crystalline crystal brick. By adopting the mono-crystalline crystal brick surface treatment method provided in the invention to treat the surfaces of the mono-crystalline crystal brick generated by cutting through a fretsaw, the wire marks residual after the cutting are eliminated through the mechanical grinding, and the damage layers of the surfaces of the mono-crystalline crystal brick are removed through the alkaline corrosion, thereby defects and bad phenomena of side damage and the like of sides of silicon chips generated after the slicing of the mono-crystalline crystal brick are reduced.
Description
technical field [0001] The invention relates to the field of processing solar-grade semiconductor monocrystalline silicon wafers, in particular to a surface treatment method for solar-grade monocrystalline crystal bricks. Background technique [0002] During the processing of solar-grade semiconductor single crystal silicon wafers, the single crystal bricks produced by wire sawing cannot be sliced directly due to their rough surface and serious line marks. [0003] Before slicing the single crystal brick, it is necessary to process the line mark on the surface of the single crystal brick. The processing method of the surface line mark of the single crystal brick in the prior art is: use a diamond grinding wheel to grind the single crystal brick The surface is subjected to physical mechanical grinding treatment to remove the line marks on the surface of the single crystal brick. However, when dealing with line marks on the surface of monocrystalline tiles, a new damaged la...
Claims
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IPC IPC(8): C30B33/10C30B29/06
Inventor 唐威包剑赵学军
Owner 镇江荣德新能源科技有限公司