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Induction gate type amorphous metal oxide TFT gas sensor

An amorphous oxide and gas sensor technology, applied in the direction of transistors, semiconductor devices, electrical components, etc., to achieve the effect of online active amplification signal changes, high sensitivity and large area

Active Publication Date: 2012-11-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] Therefore, the technical problem to be solved in the present invention is to overcome a series of problems in the existing thin film integrated gas sensor, such as technology, cost, uniformity, response efficiency, reaction speed, operating temperature and power consumption, and provide a new type of high-efficiency and low-efficiency sensor. Amorphous oxide semiconductor material and device structure applied to gas detection with uniform cost and large area

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  • Induction gate type amorphous metal oxide TFT gas sensor
  • Induction gate type amorphous metal oxide TFT gas sensor
  • Induction gate type amorphous metal oxide TFT gas sensor

Examples

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Embodiment 1

[0039] Such as Figure 1A Shown is a schematic diagram of an induction gate TFT gas sensor according to the present invention, including a substrate 1 , source and drain electrodes 2 , a TFT conductive film 3 , a gate insulating dielectric layer 4 , and a top gate electrode 5 . Wherein, the substrate 1 is an insulating substrate and provides support, and its material is, for example, a silicon chip whose surface is an insulating layer (preferably silicon-on-insulator SOI, or it can be deposited on a bulk silicon substrate or thermally oxidized to make silicon dioxide. The liner layer can also form an insulating layer of silicon nitride or silicon oxynitride on the bulk silicon), glass (can be doped as commonly used borophosphosilicate glass BPSG, or spin-on-glass SOG, and the glass substrate 1 is preferably It has a rectangular shape for cutting and large-area fabrication), quartz, plastic (preferably a composition with a higher melting point and hardness and good insulation), ...

Embodiment 2

[0049] Such as Figure 2A Shown is a schematic cross-sectional view of an induction gate TFT gas sensor according to the present invention, including. Wherein, the back gate electrode 6 is formed by sputtering deposition first on the substrate 1 such as a silicon wafer with an insulating layer on the surface, a silicon wafer substrate with a hollowed out back, glass, quartz, plastic, etc., and its material is, for example, Mo, Pt, Al, Ti, Co, Au, Cu, etc. can also be other materials with conductive function, such as doped polysilicon, such as metal nitrides such as TiN and TaN, and the like. Subsequently, a gate insulating dielectric layer 4 is formed on the substrate 1 and the back gate electrode 6, for example, silicon dioxide, silicon nitride, silicon oxynitride, or high-k materials such as hafnium oxide and tantalum oxide are deposited by low-temperature CVD. , can also be a combination of these materials, and the combination can be mixed or laminated. On the gate insula...

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Abstract

The invention provides an induction gate type amorphous metal oxide TFT gas sensor which comprises a substrate, source and drain electrodes formed on the substrate, a TFT conductive film formed on the substrate and on a signal detection electrode, a gate insulating dielectric layer formed on the substrate and on the TFT conductive film and a top gate electrode formed on the gate insulating dielectric layer. The gas sensor is characterized in that the TFT conductive film comprises an amorphous metal-oxide semiconductor and the top gate electrode comprises a gas-sensitive metal-oxide semiconductor. According to the gas sensor provided by the invention, since the amorphous semiconductor is used as the TFT conductive film and a gas-sensitive metal-oxide semiconductor layer is used as the top gate electrode, the advantage of excellent uniform conductive performance of the amorphous oxide TFT and the advantages of gas adsorption and reaction characteristics of high-sensitivity metal oxides are combined, high-sensitivity monitoring of environmental gas can be carried out, online changes of active amplifying signals are realized, and therefore, the gas sensor with the advantages of high sensitivity, a large area, low cost and monolithic integration is formed.

Description

technical field [0001] The invention relates to a semiconductor sensitive device, in particular to an efficient, low-cost, large-scale and integrable amorphous metal oxide semiconductor gas sensor. Background technique [0002] With the continuous development of social life and industrial technology, gas sensors play an increasingly important role in monitoring toxic and harmful gases, industrial waste gas, air pollution and improving the environmental protection level of food and living environment. The main application examples are NO in the atmosphere x , SO x , CO 2 Monitoring of harmful gases such as; monitoring of CO in life and production; detection of ethanol and methanol; detection of automobile exhaust, etc. [0003] Since the 1960s, metal oxide semiconductor gas sensors have occupied the main market of gas sensors due to their high sensitivity and rapid response. The original gas sensor mainly uses SnO 2 , ZnO is a gas-sensitive material, and some new materia...

Claims

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Application Information

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IPC IPC(8): G01N27/04H01L29/04H01L29/49H01L29/786
Inventor 殷华湘陈大鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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