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Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof

A double-layer structure and vertical magnetization technology, applied in the field of information storage, can solve the problems of reduced magnetic anisotropy, achieve the effects of improving coercive force, high chemical properties, and weakening exchange coupling

Active Publication Date: 2015-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention does not adopt the bottom material and material doping method, but deposits the protective layer material Ta on the CoPt film to solve the problem that the magnetic anisotropy energy of the CoPt magnetic film is easily oxidized during the preparation and production process. , and promotes L1 0 (001) vertically oriented growth

Method used

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  • Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof
  • Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof
  • Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof

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preparation example Construction

[0040] In the preparation method provided by the invention, following preferred processing parameters can be adopted:

[0041] The power of the sputtering Co target and the CoPt alloy target is 15W-200W (a further preferred value is 20W), and the sputtering Ar pressure is 0.45Pa-1.0Pa (a further preferred value is 0.5Pa).

[0042] The sputtering Ta target power is 15W-200W (more preferably 25W), and the sputtering Ar gas pressure is 0.45Pa-1.0Pa (more preferably 0.5Pa).

[0043] The annealing temperature is 600°C-850°C, and further, the annealing time of CoPt / Ta and CoPt is 10min-1h.

[0044] The CoPt / Ta structure of the present invention and the preparation method using Ta as the CoPt protective layer can adopt methods such as sputtering, chemical vapor deposition, evaporation, atomic layer deposition, metal-organic thermal decomposition, or laser-assisted deposition. any one of the preparation methods.

Embodiment 1

[0046] In this embodiment, the magnetron sputtering method is used to prepare CoPt / Ta and CoPt magnetic thin films.

[0047] The substrate is Si(100), and a CoPt alloy target with a diameter of 100 mm and a thickness of 5 mm (atomic ratio Co:Pt=1:1) is prepared, and the purity of the target is 99.999% (atomic percentage). Using the method of magnetron sputtering, Ar gas with a purity of 99.999% is introduced during sputtering.

[0048] The specific process parameters are as follows: CoPt alloy target adopts DC power supply, sputtering power is 120W; sputtering Ar pressure is 1Pa; pre-sputter for 1 hour before each sputtering to ensure that the oxide layer on the surface of CoPt alloy target is completely removed. The thickness of the film was measured by a step meter to prepare a 50nm CoPt magnetic film. The vertical magnetic properties of CoPt (50nm) thin films were tested by VSM. figure 2 From the vertical magnetization curve of CoPt shown, it can be seen that the vertica...

Embodiment 2

[0050] The phase transition temperature of CoPt thin film was investigated.

[0051] The substrate is Si(100), and a Co target with a diameter of 100 mm and a thickness of 5 mm is prepared. The purity of the target is 99.999% (atomic percentage). The Pt sheet with a size of 2*10 mm is evenly pasted on the Co target. The atomic ratio of Co to Pt was adjusted to be 1:1 by changing the number of Pt flakes. Then, the method of magnetron sputtering is used, and Ar gas with a purity of 99.999% is introduced during sputtering.

[0052] The specific process parameters are as follows: the Co target adopts a DC power supply, and the sputtering power is 20W; the sputtering Ar pressure is 0.5Pa; each sputtering is pre-sputtered for 1 hour to ensure that the oxide layer on the surface of the Co target is completely removed. CoPt magnetic films with different atomic ratios can be obtained by changing the number of Pt sheets attached to the Co target each time. By analyzing with the energy...

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Abstract

The invention discloses a bi-layer structure of a CoPt / Ta vertical magnetic film and a preparation method thereof. The material sequentially comprises a substrate, a CoPt magnetic layer and a Ta protective layer, wherein the thickness of the CoPt is 10nm-100nm, and the thickness of the Ta protective layer is 1nm-20nm. The Ta is used for the protective layer of the CoPt / Ta vertical magnetic film, and has the functions that in sputtering deposition and annealing, the Ta element is diffused towards the CoPt layer and is segregated to a CoPt crystal boundary, so that a crystal boundary area becomes a non magnetic area, a CoPt magnetization reversal mechanism is changed, and the coercivity of a film medium is improved; and 2, in a heat treatment process, a Ta atom is diffused towards the CoPt magnetic layer to weaken the exchange-coupling interaction between adjacent magnetic particles, reduce the overturning noise of the medium and increase the recording bit density.

Description

technical field [0001] The invention belongs to the field of information storage, and in particular relates to a CoPt / Ta double-layer structure material which can be used to improve the vertical magnetic properties of CoPt films and a preparation method thereof. Background technique [0002] In the external memory of the computer, the magnetic storage technology develops rapidly and forms a huge industry. In recent years, the storage density of magnetic storage media has developed rapidly at a rate of 10 times every 5 years. With the further increase of the magnetic recording density, the size of the recording unit decreases, so that the size of the magnetic grains in the unit recording unit decreases rapidly, and the horizontal magnetic recording (the magnetization direction is parallel to the running direction of the recording medium) encounters the superparamagnetic effect limits. The superparamagnetic effect will cause the recorded information to become unstable or eve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/851C23C14/14C23C14/34
Inventor 程晓敏刘临利缪向水刘辉洪玮关夏威
Owner HUAZHONG UNIV OF SCI & TECH
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