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Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery

A solar cell and silicon nitride film technology, which is applied in the field of solar cells, can solve the problems affecting the conversion efficiency of solar cells and the quality degradation of silicon nitride films, etc., to reduce the light absorption coefficient, improve the anti-reflection effect, and increase the production rate. Effect

Active Publication Date: 2015-02-18
YINGLI ENERGY CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] At present, with the increase of solar energy output, it is necessary to increase the belt speed of PECVD equipment to make it faster to deposit silicon nitride film. However, as the deposition speed increases, the quality of silicon nitride film will decline, which will affect the solar energy Battery Conversion Efficiency

Method used

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  • Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery
  • Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery
  • Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery

Examples

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Embodiment 1

[0036] Silicon nitride film was deposited on the silicon wafer that has been textured, diffused and etched by flat PECVD equipment. The belt speed was set at 180cm / min and the chamber temperature was 340°C. The chamber of the flat PECVD equipment used had 8 gas paths, controlling SiH of the first 3 gas paths 4 and NH 3 The volume ratio is 1:1.2, SiH 4 The flow rate is 180sccm; in the last 5 gas paths, the SiH in the reaction gas 4 and NH 3 The volume ratio of SiH is 1:3, and SiH 4 The flow rate is 90 sccm; then the silicon wafer deposited by the silicon nitride film is subjected to screen printing electrodes and sintering processes to form the solar cell of Example 1.

Embodiment 2

[0038] Silicon nitride film was deposited on the silicon wafer that has been textured, diffused and etched by flat PECVD equipment. The belt speed was set at 190cm / min and the chamber temperature was 340°C. The chamber of the flat PECVD equipment used had 8 gas paths, controlling SiH of the first 3 gas paths 4 and NH 3 The volume ratio is 1:1.5, SiH 4 The flow rate is 200sccm; in the last 5 gas paths, SiH in the reaction gas 4 and NH 3 The volume ratio of SiH is 1:3.5, and SiH 4 The flow rate is 110 sccm; then the silicon wafer deposited by the silicon nitride film will go through the screen printing electrode and sintering process to form the solar cell of Example 2.

Embodiment 3

[0040] The silicon wafers that have undergone texturing, diffusion, and etching are deposited with a flat-plate PECVD equipment to deposit a silicon nitride film. The belt speed is set at 200cm / min, and the chamber temperature is 340°C. The chamber of the flat-plate PECVD equipment used has 8 gas paths, controlling SiH of the first 3 gas paths 4 and NH 3 The volume ratio is 1:1.8, SiH 4 The flow rate is 230sccm; in the last 5 gas paths, SiH in the reaction gas 4 and NH 3 The volume ratio of SiH is 1:3.8, and SiH 4 The flow rate is 100 sccm; then the silicon wafer deposited by the silicon nitride film goes through the screen printing electrode and sintering process to form the solar cell of Example 3.

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Abstract

The invention provides a method for depositing a silicon nitride film, a crystalline silicon solar energy battery and a manufacturing method of the crystalline silicon solar energy battery. According to the method for depositing the silicon nitride film, a planar PECVD (plasma enhanced chemical vapor deposition) is adopted to deposit the silicon nitride film, wherein the planar PECVD has a belt speed of 180-200 cm / min, a chamber of the planar PECVD comprises 2n gas paths, n is an integer greater than 1 and less than 5, a silicon wafer is deposited into the silicon nitride film after passing through the 2n gas paths of the chamber of the planar PECVD in sequence, and the reaction gas flow of each of the front (n-1) gas paths is Q1 and the volume ratio of each of gas components in the reaction gas is a; and the reaction gas flow of each of the back (n+1) gas paths is Q2 and the volume ratio of each of gas components in the reaction gas is b, wherein Q1 is unequal to Q2 and a is unequal to b. According to the invention, the silicon nitride film can be deposited in a high belt speed, two layers of silicon nitride films can be obtained through a control method of changing the reaction gas flow, and the anti-reflection effect of the silicon nitride film can be improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for depositing a silicon nitride film, a crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] Crystalline silicon solar cells have been widely used in various fields, and their good stability and mature process flow are the basis for their large-scale application. The production process of crystalline silicon solar cells is as follows: figure 1 As shown, the silicon wafer is firstly cleaned, and the surface of the silicon wafer is structured through chemical cleaning; secondly, the cleaned silicon wafer is subjected to diffusion treatment, and the silicon wafer is subjected to a boron diffusion process to form a p-n junction; and then the p-n junction is formed. The silicon wafer undergoes a peripheral etching process to remove the conductive layer formed on the edge of the silicon wafer during the diffusion process; then undergoes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/318H01L31/18H01L31/0216
CPCY02P70/50
Inventor 范志东赵学玲张小盼解占壹王涛李永超
Owner YINGLI ENERGY CHINA
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