Enhanced A1N/GaN high-electron mobility transistor and fabrication method thereof

Abstract

The invention relates to the technical field of a semiconductor, and discloses an enhanced A1N / GaN high-electron mobility transistor and a fabrication method of the enhanced A1N / GaN high-electron mobility transistor. The fabrication method comprises the steps of: providing a substrate, planting a nucleating layer on the substrate; planting a gallium nitride high-resistance buffer layer on the nucleating layer; planting a high-mobility gallium nitride groove layer on the gallium nitride high-resistance buffer layer; planting a thin-layer aluminum nitride barrier layer on the gallium nitride groove layer; planting a SiNx surface donor layer on the aluminum nitride barrier layer; forming a source electrode and a drain electrode on the SiNx surface donor layer; and etching the SiNx surface donor layer between the source electrode and the drain electrode to form a grid groove area, and forming a grid electrode in the grid groove area. The ultra-thin A1N barrier layer under the grid can not form two-dimensional electronic gas in the groove, so that the overall groove is cut off, and an enhanced HEMT (high electron mobility transistor) apparatus is formed. The enhanced A1N / GaN high-electron mobility transistor can be applied to the fields such as a high-power power switch, a micro-wave switch and a digital circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an enhanced AlN / GaN high electron mobility transistor and a manufacturing method thereof. Background technique [0002] As a third-generation semiconductor material, GaN-based materials have the advantages of large band gap, high electron saturation drift velocity, good chemical stability, radiation resistance, high temperature resistance, and easy formation of heterojunctions. , The material of choice for radiation-hardened high electron mobility transistor (HEMT) structures. The GaN-based heterostructure has high carrier concentration and electron mobility, its on-resistance is small, and the advantage of wide band gap makes it able to withstand high operating voltage. Therefore, GaN-based HEMTs are very suitable for applications such as high-temperature, high-frequency, high-power devices, and low-loss power switching devices. [0003] GaN-based materials have strong ...

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Problems solved by technology

The method (1) is difficult to precisely control the etching depth, the threshold voltage of the device fluctuates greatly, and the channel cannot be completely pinched off under zero bias, and it is in a small amount of leakage current; the method (2) uses The depth distribution of high-energy F ion implantation is uneven, the repeatability is poor, and serious lattice damage is introduced, which deteriorates the device performance, and the thermal stability of F atoms in the material is poor. The reliability of this method needs further verification; (3) The method is not yet mature, the activation of the P-type AlGaN barrier layer is difficult, and a high annealing temperature is required, which is rarely used

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