Enhanced A1N/GaN high-electron mobility transistor and fabrication method thereof
A high electron mobility, transistor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as high annealing temperature, lattice damage, poor thermal stability, etc., achieve precise control of device threshold, reduce pass State resistance, high reliability effect
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[0039] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings. Of course, they are only examples, and are not intended to limit the invention.
[0040] The present invention uses the epitaxial structure and material energy band control to make an ultra-thin barrier AlN / GaN heterojunction, so that two-dimensional electron gas (2DEG) cannot be formed at the heterogeneous interface, which is used to realize the pinch-off region of the channel; On the one hand, SiN is deposited on the ultra-thin barrier AlN / GaN heterojunction x The surface donor layer is conducive to the SiN x A large number of positive charge donors are generated at the / AlN interface, which reduces the barrier height at the AlN surface, thereby forming a 2DEG channel at the AlN / GaN interface, and AlN / GaN HEMT has extre...
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