Preparation method of silicon carbide cutting edge materials for photovoltaic industry

Abstract

The invention discloses a preparation method of silicon carbide cutting edge materials for a photovoltaic industry and belongs to photovoltaic industries. The preparation method of silicon carbide cutting edge materials for a photovoltaic industry comprises the following steps of carrying out coarse crushing of a silicon carbide raw material, carrying out air classification after primary crushing, carrying out coarse screening and fine screening after secondary crushing, carrying out pickling classification to obtain a silicon carbide cutting edge material JIS1000, a silicon carbide cutting edge material JIS1200, a silicon carbide cutting edge material JIS1500 and a silicon carbide cutting edge material JIS2000. The preparation method provided by the invention has the advantages that compared with the traditional technology, the preparation method provided by the invention can realize production of a silicon carbide cutting edge material product having a low roundness value of 0.83 to 0.88 and a high yield of 70 to 75%; and the silicon carbide cutting edge material product obtained by the preparation method can effectively improve crystalline silicon cutting efficiency and slicing quality and obviously reduce the waste of a silicon carbide raw material.

Description

technical field [0001] The invention relates to a method for preparing a cutting blade, in particular to a method for preparing a silicon carbide cutting blade used in the photovoltaic industry. Background technique [0002] With the increasing tension of traditional fossil energy sources such as oil and coal in the world, the energy crisis is imminent. Renewable energy solar energy is the most important new energy source in the 21st century due to its inexhaustible, inexhaustible, clean, safe and other unique advantages. The solar energy industry in China has entered a period of rapid development; when preparing solar cells, it is necessary to cut crystalline silicon (including monocrystalline silicon and polycrystalline silicon) rods or ingots into silicon wafers; Among them, multi-wire cutting technology is used; the working principle of multi-wire cutting is to use silicon carbide blade as abrasive, polyethylene glycol liquid as dispersant, and metal wire to drive silico...

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Problems solved by technology

[0003] At present, the silicon carbide cutting blades used in the photovoltaic industry are mainly divided into four varieties according to the different particle sizes: JIS1000, JIS1200, JIS1500 and JIS2000 (respectively, the Japanese particle size standards are 1000 mesh, 1200 mesh, 1500 mesh and 2000 mesh). It is equipped for different types of crystalline silicon cutting machines; the silicon carbide cutting blades used in the photovoltaic industry are mainly obtained by crushing and screening silicon carbide raw materials, the production process is single, and the main equipment for producing silicon carbide cutting blades It is one of Raymond mill, jet mill and ball mill; the silicon carbide cutting edge produced by Raymond mill has a high roundness value (around 0.9), which is not conducive to the cutting of crystalline silicon, and the output rate Low (about 52~53%); a roundness value of 1 indicates a circular shape, and a smaller roundness value indicates that the silicon carbide particles are more irregular and have sharp edges and corners, which is conducive to the cutting of crystalline silicon; silicon carbide produced by jet milling process The blade consumes a lot of energy and has a roundness value greater than 0.91, which is more suitable for refractory materials and ceramic materials; the roundness value of the silicon carbide cutting blade using the ball mill process is about 0.86, and the yield rate is about 50%.

It can be seen from the above that due to the use of a single Raymond mill process, jet mill process or ball mill process to produce silicon carbide cutting blades, the high roundness value is not conducive to the cutting of crystalline silicon and the low output rate leads to a lot of waste of silicon carbide The problem

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