Method for producing small-sized tin indium oxide nano-wire material in low-temperature

An indium tin oxide nano- and small-scale technology is applied in chemical instruments and methods, polycrystalline material growth, metal material coating processes, etc. Good, low preparation temperature, the effect of reducing the substrate temperature

Inactive Publication Date: 2009-08-19
NANJING UNIV
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  • Application Information

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Problems solved by technology

However, the analysis shows that these existing technologies require higher temperature, poor controllability, and most of them require the use

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  • Method for producing small-sized tin indium oxide nano-wire material in low-temperature
  • Method for producing small-sized tin indium oxide nano-wire material in low-temperature
  • Method for producing small-sized tin indium oxide nano-wire material in low-temperature

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Embodiment 1

[0025] The preferred specific steps of the method for preparing small-sized indium tin oxide nanowire material at low temperature in this embodiment are:

[0026] 1. In the electron beam evaporator (ZD450, Chengdu Nanguang Machinery, see figure 1 ) into the block or sheet ITO (In / Sn=85 / 15) target, put the cleaned single crystal silicon (or quartz, glass) substrate on the sample holder, the sample holder and the target The distance is 40cm, and there is a baffle in the middle.

[0027] 2. Close the door of the evaporation chamber of the electron beam evaporator, start vacuuming, and bake the chamber at ≥100 degrees Celsius (not higher than 300 degrees Celsius). After vacuuming for about 2-3 hours, the baking temperature of the cavity should reach above 150 degrees Celsius, and the vacuum in the cavity should be lower than 5×10 -4 Pa.

[0028] 3. After the substrate temperature reaches 150±10 degrees Celsius and the vacuum degree is relatively stable, start to evaporate. Adj...

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Abstract

The invention relates to a method for preparing small size indium tin oxide nanowire materials at low temperature, belonging to the technical field of photoelectronic device materials. The method mainly comprises the following steps: a target and a substrate are installed in a cavity of an electron beam evaporimeter; the cavity is closed, vacuumized and baked; electron beam spots are adjusted to shine on the surface of the ITO target and the electron beam current is adjusted so that the deposition rate of the target on the substrate is 0.2-0.5nm/s after evaporation; the evaporation is stopped when the depth of the deposition on the substrate meets the requirement, and the preparation is finished after cooling. The method utilizes the conventional electron beam evaporation device to prepare the small size ITO nanowire materials at low temperature. The obtained nano materials not only have good field emission characteristics and anti-reflection characteristics, but also are even, controllable and low in price, can realize preparation in large area and need no catalysts, thus can be applied in illuminating, illustrating and photovoltaic industries.

Description

technical field [0001] The invention relates to a method for preparing an indium tin oxide nanowire material, especially a method for preparing a tin-doped indium oxide (ITO) nanostructure in a large area at a low temperature using an electron beam evaporation technology, belonging to the technical field of optoelectronic device materials . Background technique [0002] With the continuous advancement of science and technology, nanomaterials have become an important and powerful pillar for the current development of high-tech. The preparation of nanomaterials and the study of related properties have always been the frontier and hot spot of nanoscience research. How to prepare nanomaterials with excellent properties in a controlled, effective, low-cost, large-scale and uniform manner is one of the most challenging issues in nanotechnology. [0003] Tin-doped indium oxide (ITO) is an important functional semiconductor material. Undoped indium oxide is an n-type semiconducto...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/30C30B29/16C30B29/62C30B23/00
Inventor 徐骏万能徐岭陈坤基林涛陈谷然甘新慧郭四华孙红程刘宇
Owner NANJING UNIV
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