Method for producing small-sized tin indium oxide nano-wire material in low-temperature
An indium tin oxide nano- and small-scale technology is applied in chemical instruments and methods, polycrystalline material growth, metal material coating processes, etc. Good, low preparation temperature, the effect of reducing the substrate temperature
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[0025] The preferred specific steps of the method for preparing small-sized indium tin oxide nanowire material at low temperature in this embodiment are:
[0026] 1. In the electron beam evaporator (ZD450, Chengdu Nanguang Machinery, see figure 1 ) into the block or sheet ITO (In / Sn=85 / 15) target, put the cleaned single crystal silicon (or quartz, glass) substrate on the sample holder, the sample holder and the target The distance is 40cm, and there is a baffle in the middle.
[0027] 2. Close the door of the evaporation chamber of the electron beam evaporator, start vacuuming, and bake the chamber at ≥100 degrees Celsius (not higher than 300 degrees Celsius). After vacuuming for about 2-3 hours, the baking temperature of the cavity should reach above 150 degrees Celsius, and the vacuum in the cavity should be lower than 5×10 -4 Pa.
[0028] 3. After the substrate temperature reaches 150±10 degrees Celsius and the vacuum degree is relatively stable, start to evaporate. Adj...
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