Luminescent thin film and preparation method and application thereof
A technology of luminescent film and percentage content, which is applied in the direction of luminescent materials, electroluminescent light sources, chemical instruments and methods, etc., can solve the problems of low luminous efficiency and inability to meet the requirements of high-brightness light-emitting devices, and achieve low cost and high production efficiency. High efficiency and simple operation
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[0022] The embodiment of the present invention further provides the method for preparing the above-mentioned luminescent thin film, which includes the following steps:
[0023] Step S01, preparing a sputtering target
[0024] Aluminum oxide, lithium oxide, titanium dioxide and manganese dioxide are mixed and sintered to form a sputtering target, the mass percentage of lithium oxide is 18%-25%, the mass percentage of titanium dioxide is 1%-10%, The mass percentage of the manganese dioxide is 0.5%-6%, and the balance is aluminum oxide;
[0025] Step S02, sputtering
[0026] Using a mixed gas of hydrogen and inert gas as the working gas, the sputtering target is formed into a film by magnetron sputtering to obtain a luminescent thin film precursor;
[0027] Step S03, annealing treatment
[0028] The luminescent film precursor is annealed to obtain the luminescent film of the embodiment of the present invention.
[0029] Specifically, the aluminum oxide, aluminum oxide, titani...
Embodiment 1
[0039] Li with a purity of 99.99% 2 O, Al 2 o 3 , MnO 2 and TiO 2 The powders are uniformly mixed to obtain the mixture, calculated as 100g of the total mass of the mixture, wherein Li 2 The mass percentage of O is 20.9%, Al 2 o 3 The mass percentage content is 71.1%, MnO 2 The mass percentage content is 3%, TiO 2 The mass percentage content is 5%.
[0040]The mixture was sintered at 1250°C into a Φ50×2mm ceramic sputtering target, and the ceramic sputtering target was placed in the vacuum chamber of the magnetron sputtering equipment, and cleaned ultrasonically with acetone, absolute ethanol and deionized water ITO glass substrate, blow dry with high-purity nitrogen, and put it into a vacuum chamber;
[0041] Adjust the distance between the target and the substrate to 75mm, and use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of the argon-hydrogen mixed gas is 20sccm, the hydrogen content is 5%, t...
Embodiment 2
[0045] Li with a purity of 99.99% 2 O, Al 2 o 3 , MnO 2 and TiO 2 The powders are uniformly mixed to obtain the mixture, calculated as 100g of the total mass of the mixture, wherein Li 2 The mass percentage of O is 25%, Al 2 o 3 The mass percentage content is 64%, MnO 2 The mass percentage content is 1%, TiO 2 The mass percentage content is 10%.
[0046] The mixture was sintered at 900°C into a Φ50×2mm ceramic sputtering target, and the ceramic sputtering target was placed in the vacuum chamber of the magnetron sputtering equipment, and cleaned ultrasonically with acetone, absolute ethanol and deionized water ITO glass substrate, blow dry with high-purity nitrogen, and put it into a vacuum chamber;
[0047] Adjust the distance between the target and the substrate to 50mm, and use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 1.0×10 -3 Pa, the working gas flow rate of the argon-hydrogen mixed gas is 16sccm, the hydrogen content is 1%, the ...
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