Metal base plate used for welding power module

Abstract

The invention relates to a metal base plate used for welding a power module, which comprises a plate body, wherein more then four spacing protrusions for spacing the outer periphery of a welding flux layer are arranged on the front face of the plate body, a groove is arranged on the bottom of the plate body, and the groove is filled with a heat conducting silicon grease. In the invention, the metal base plate is improved, so that the metal base plate has reasonable structure, the welding flux layer can be conveniently positioned, the welding reliability is increased, so that the metal base plate has the characteristic of good heat conductivity and can maintain the consistent heat conductivity of the power module and prolong the service life of the power module.

Description

technical field [0001] The invention relates to a metal substrate used for welding power modules, belonging to the technical field of semiconductors. Background technique [0002] With the development of high-power power electronics technology, more and more IGBT power modules are used in the automotive industry, solar energy, wind energy, locomotive traction and other fields. Since the IGBT power modules work under high current and high voltage conditions, the Will generate a lot of power consumption. However, as the power consumption per unit volume of the power semiconductor module increases, it will cause the device to become overheated and fail during operation. Therefore, the heat dissipation technology of the power semiconductor module is the key to the design and use of the power semiconductor module. [0003] At present, domestic power semiconductor modules use welding methods to weld each chip and each component on the metal substrate. When the chip is soldered, t...

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Problems solved by technology

However, as the power consumption per unit volume of the power semiconductor module increases, it will cause the device to become overheated and fail during operation. Therefore, the heat dissipation technology of the power semiconductor module is the key to the design and use of the power semiconductor module.

[0003] At present, domestic power semiconductor modules use welding methods to weld each chip and each component on the metal substrate. When the chip is soldered, the lower part of the chip is welded to the metal substrate through the solder layer. The uniformity of the thickness of the solder layer cannot be guaranteed. When the solder layer is placed, there will be a certain deviation in its position, so the solder layer will warp and slope to a certain extent, resulting in poor soldering, and poor soldering will lead to an increase in the calorific value during the use of the product, and eventually the temperature will rise. Causes damage to the device, so poor soldering of the chip is one of the factors that cause poor reliability and low life of the semiconductor module

Furthermore, when the power module is used, although the copper substrate is used, due to the different welding positions of each chip, it can only rely on the thermal conductivity of the copper substrate itself for heat conduction. The instantaneous heat conduction effect is not good, which will cause temperature distribution on the copper substrate. Uneven, due to the local temperature rise of the copper substrate, it will eventually lead to a decrease in the life of the power module or failure

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