Manufacturing method of GaN substrate laser diode

Abstract

The invention discloses a manufacturing method of a GaN substrate laser diode. The manufacturing method comprises the following steps of: forming a GaN substrate and successively depositing a p-type coating layer, a p-type light guide layer, an active layer, an n-type blocking layer, an n-type light guide layer and an n-type coating layer, wherein the method for forming the GaN substrate comprises the following steps of: putting a GaN wafer into a high-temperature and high-pressure device, heating and pressurizing the GaN wafer with the heating temperature being 820-880 DEG C and the applied pressure being 4.1-4.6GPa, and maintaining for 10-15 minutes; stopping heating and pressurizing so that the GaN wafer is restored to normal temperature and normal pressure; and annealing for 20-30 minutes in the high-temperature and high-pressure device, and taking out the GaN wafer. The manufacturing method disclosed by the invention has the advantages that the crystal defect density of the laser diode substrate can be obviously reduced, and the performance and the service life of the laser diode are improved.

Description

technical field [0001] The invention relates to a manufacturing method of a laser diode. Background technique [0002] A laser diode (LD) is a diode formed of semiconductor materials, and its basic structure includes a substrate and a P / N cladding layer deposited on the substrate in sequence, an active layer and a P / N cladding layer, and an N Ohmic contacts on the P-type and P-type cladding layers. As the foundation of the building of LD, the substrate plays an important role. Sapphire is a commonly used LD substrate, but due to the lattice and thermal stress mismatch between it and the heterogeneous epitaxial layer on it, it will crack due to different expansion degrees after heating, resulting in device damage. Another type of LD substrate includes GaN, GaAs, InP and other semiconductor materials. The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal ...

AI Technical Summary

Problems solved by technology

The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain will reduce the quality and performance of the epitaxial layer on the substrate, resulting in a shortened life of the laser diode.

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