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Organic semiconductors

A technology of semiconductors and compounds, applied in the fields of semiconductor devices, organic chemistry, organic dyes, etc., can solve the problems of reduced band gap and stability of semiconductors, highly insoluble compounds, and short lifespan, etc., and achieve the effect of improving solubility.

Inactive Publication Date: 2012-12-26
CAMBRIDGE DISPLAY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0028] However, the increased conjugation levels required to enable compounds to form such π-π stacking can also lead to a reduction in the bandgap and stability of the semiconductor, leading to poor performance and short lifetimes.
[0029] Furthermore, due to the molecular sizes required to obtain a wide range of conjugations, these compounds can be highly insoluble, which poses particular problems for synthesis and makes them difficult to use in efficient transistor production methods such as inkjet printing.

Method used

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  • Organic semiconductors
  • Organic semiconductors
  • Organic semiconductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075]A suspension of Intermediate 1 (7.5g, 12.0mmol), KOH (16.1g, 288mmol) and quinoline (216ml) was heated at 230°C for 3 hours. The resulting red solution was allowed to cool to room temperature, diluted with toluene (300 ml), and washed with water (2 x 150 ml), 2M HCl (2 x 150 ml), brine (2 x 150 ml), washed with MgSO 4 Dry and concentrate in vacuo.

[0076] The red solid was transferred to a Soxhlet thimble (33 x 100mm) and extracted with acetonitrile (600ml). The product was purified by sublimation (260 °C and 2 × 10 -6 mbar pressure), to obtain the target product in the form of dark red solid [(0.75g, 11%, HPLC 99.3%), m / z 552 (M + +2×H)), 550 (M + ), 451, 352], which has the following structure:

[0077]

Embodiment 2

[0079] Using the compound of Example 1 as an active layer, an organic field effect transistor device was fabricated in the form of a top-gate, bottom-contact device. The gold source-drain contacts are defined by lift-off on the glass substrate. Channels 10-200 [mu]m long and 2 mm wide are defined. Devices were fabricated by spin coating the compound of Example 1 onto a clean substrate from a 1.5% (w / v) mesitylene solution at 1000 rpm for 30 seconds. The films were then dried on a hot plate at 80° C. for 10 minutes and cooled on a metal block for 1 minute.

[0080] Fluorinated dielectric materials were spin-coated onto the semiconducting layer from a fluorine-containing solvent and dried on a hot plate at 80 °C for 10 min and cooled on a metal block for 1 min. An 80 nm thick aluminum layer was thermally evaporated as the gate.

[0081] At a channel length of 20 μm, the highest observed mobility at saturation is 0.025 cm 2 / Vs; get 4.5×10 4 on-off ratio (measured from +20V ...

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Abstract

A semiconducting compound comprises the structure: where X1and X2are independently S, Se, Si, R1R2, O, CR3, N, NR4, where R1to R4independently comprise hydrogen, straight, branched or cyclic alkyl, akenyl or alkynyl groups, preferably having 1 to 20 carbons, alkoxy, aryl, silyl or amino; where each of Ar1to Ar4is optional and independently comprises, if present, an aryl or heteroaryl group; and where Y1to Y4independently comprise hydrogen, reactive groups, optionally substituted straight, branched or cyclic alkyl, alkoxy, akenyl, alkynyl, amido or amino groups, preferably having 1 to 20 carbon atoms, optionally substantial aryl or heteroaryl where at least one of Y1to Y4does not comprise hydrogen. Also shown is an electronic device having an organic semiconductor portion e.g. a thin film transistor, and method of manufacturing an electronic device by applying a solution of semiconducting compound.

Description

technical field [0001] The present invention relates generally to organic semiconductors, and more particularly to organic semiconductors used to form part of thin film transistors. Background technique [0002] Transistors can be divided into two main types: bipolar junction transistors and field effect transistors. Both types have a common structure comprising three electrodes with a semiconductor material disposed between them in the channel region. The three electrodes of a bipolar junction transistor are called emitter, collector, and base, while in field effect transistors, the three electrodes are called source, drain, and gate. Since the current between the emitter and collector is controlled by the current flowing between the base and emitter, bipolar junction transistors can be described as current-operated devices. In contrast, field effect transistors can be described as voltage-operated devices since the current flowing between source and drain is controlled b...

Claims

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Application Information

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IPC IPC(8): H01L51/00H01L51/05
CPCH01L51/0058H01L51/0036H01L51/0071C07D333/18H01L51/0545H01L51/0056C09B69/102C09B3/78C07D495/06H01L27/3274H01L51/0074C07D495/22H01L51/0094C09B69/101H10K59/125H10K85/113H10K85/624H10K85/40H10K10/466C07C13/62C07D209/94C07D307/93C07D333/78C07D343/00C07D345/00H10K85/00H10K10/00H10K85/626H10K85/657H10K85/6576
Inventor S·祖布里T·祖布里
Owner CAMBRIDGE DISPLAY TECH LTD