Organic semiconductors
A technology of semiconductors and compounds, applied in the fields of semiconductor devices, organic chemistry, organic dyes, etc., can solve the problems of reduced band gap and stability of semiconductors, highly insoluble compounds, and short lifespan, etc., and achieve the effect of improving solubility.
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Embodiment 1
[0075]A suspension of Intermediate 1 (7.5g, 12.0mmol), KOH (16.1g, 288mmol) and quinoline (216ml) was heated at 230°C for 3 hours. The resulting red solution was allowed to cool to room temperature, diluted with toluene (300 ml), and washed with water (2 x 150 ml), 2M HCl (2 x 150 ml), brine (2 x 150 ml), washed with MgSO 4 Dry and concentrate in vacuo.
[0076] The red solid was transferred to a Soxhlet thimble (33 x 100mm) and extracted with acetonitrile (600ml). The product was purified by sublimation (260 °C and 2 × 10 -6 mbar pressure), to obtain the target product in the form of dark red solid [(0.75g, 11%, HPLC 99.3%), m / z 552 (M + +2×H)), 550 (M + ), 451, 352], which has the following structure:
[0077]
Embodiment 2
[0079] Using the compound of Example 1 as an active layer, an organic field effect transistor device was fabricated in the form of a top-gate, bottom-contact device. The gold source-drain contacts are defined by lift-off on the glass substrate. Channels 10-200 [mu]m long and 2 mm wide are defined. Devices were fabricated by spin coating the compound of Example 1 onto a clean substrate from a 1.5% (w / v) mesitylene solution at 1000 rpm for 30 seconds. The films were then dried on a hot plate at 80° C. for 10 minutes and cooled on a metal block for 1 minute.
[0080] Fluorinated dielectric materials were spin-coated onto the semiconducting layer from a fluorine-containing solvent and dried on a hot plate at 80 °C for 10 min and cooled on a metal block for 1 min. An 80 nm thick aluminum layer was thermally evaporated as the gate.
[0081] At a channel length of 20 μm, the highest observed mobility at saturation is 0.025 cm 2 / Vs; get 4.5×10 4 on-off ratio (measured from +20V ...
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