Flip etching-after-packaging manufacture method and packaging structure for chips with two sides and three-dimensional lines

Abstract

The invention relates to a flip etching-after-packaging manufacture method and a packaging structure for chips with two sides and three-dimensional lines. The method comprises the processing steps of obtaining metal substrates; pre-plating copper materials on the surfaces of the metal substrates; pasting light resistance film; removing part of the light resistance film on the front surfaces of the metal substrates; electroplating inert metal line layers; electroplating metal line layers; performing packaging; pasting the light resistance film; opening holes on the surfaces of molding compounds; electroplating the metal line layers; arranging chips in an inverted mode and filling the bottoms of the chips; performing packaging; pasting the light resistance film; performing chemical etching; electroplating the metal line layers; performing packaging; opening holes on the surfaces of molding compounds; digging grooves on the surfaces of the molding compounds; electroplating the metal line layers; covering line screen plates; performing pretreatment before metallization; removing the line screen plates; electroplating the metal line layers; performing packaging; opening holes on the surfaces of molding compounds; performing cleaning; implanting balls; and cutting finished products. The flip etching-after-packaging manufacture method and the packaging structure for chips with two sides and three-dimensional lines have the advantages of reducing manufacturing costs, improving safety and reliability of packaging bodies, reducing environmental pollution, and being capable of designing and manufacturing high-density lines.

Description

technical field [0001] The invention relates to a double-sided three-dimensional circuit chip flip-chip-first-sealing-then-etching manufacturing method and its packaging structure, belonging to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 77 , take a substrate made of glass fiber material, [0004] Step two, see Figure 78 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 79 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 80 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 81 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 82 , coated with a photoresist film o...

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Problems solved by technology

[0019]3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the reliability and safety ability or is the level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 89 , the best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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