Parallel type polymer solar cell and preparation method thereof

A technology of solar cells and polymers, applied in the field of solar cells, can solve the problems of restricted efficiency, limited sunlight absorption, low photoelectric conversion efficiency, etc., and achieve the effect of improving injection efficiency and improving conductivity

Active Publication Date: 2013-01-02
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The current polymer solar cells generally have a single cell structure, the photoelectric conversion efficiency is not high, and the active layer has

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Parallel type polymer solar cell and preparation method thereof
  • Parallel type polymer solar cell and preparation method thereof
  • Parallel type polymer solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] The preparation method of above-mentioned parallel type polymer solar cell, such as figure 2 As shown, the process steps are as follows:

[0041] S1. Ultrasonic cleaning the anode base in detergent, deionized water, acetone, ethanol, and isopropanol in order to remove organic pollutants on the surface; after cleaning, perform oxygen plasma treatment at a power of 10-50W for 5 ~15min, or UV-ozone treatment 5~20min;

[0042] S2. Spin-coat a first hole buffer layer with a thickness of 20-80 nm on the surface of the anode layer of the anode substrate, and then spin-coat a first active layer with a thickness of 80-300 nm on the surface of the first hole buffer layer after drying, and then dry deal with;

[0043] S3. Evaporating an n-type doped layer with a thickness of 10-150 nm on the surface of the first active layer;

[0044] S4, coating a second active layer with a thickness of 80-300 nm on the surface of the n-type doped layer, and then drying; then spin-coating a s...

Embodiment 1

[0051] The structure of the parallel polymer solar cell in this embodiment is: ITO substrate / PEDOT:PSS / P3HT:PCBM / CsN 3 :Bphen / P3HT:PCBM / PEDOT:PSS / Al.

[0052] The preparation process of the parallel polymer solar cell is as follows:

[0053] 1. Clean the ITO substrate (where ITO is the anode layer) with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean for 15 minutes each to remove organic pollutants on the glass surface. After cleaning, The ITO layer of the ITO substrate was treated with oxygen plasma for 15 minutes at a power of 10W;

[0054] 2. Prepare PEDOT:PSS aqueous solution (wherein, PEDOT:PSS mass ratio is 6:1; The total mass percentage of PEDOT and PSS is 1.5wt%) is prepared on the ITO layer surface of ITO substrate by the mode of spin coating; Drying, Prepare a first hole buffer layer with a thickness of 40nm;

[0055] 3. Spin-coat the P3HT:PCBM chlorobenzene solution system on the surface of the first hole buffer...

Embodiment 2

[0068] The structure of the parallel polymer solar cell in this embodiment is: IZO substrate / PEDOT:PSS / P3HT:PCBM / CsF:PBD / MDMO-PPV:PCBM / PEDOT:PSS / Ag.

[0069] The preparation process of the parallel polymer solar cell is as follows:

[0070] 1. Clean the IZO substrate (where IZO is the anode layer) with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean for 15 minutes each to remove organic pollutants on the glass surface. After cleaning, Treat the IZO surface of the IZO substrate with oxygen plasma for 10 minutes at a power of 30W;

[0071] 2. Prepare the PEDOT:PSS aqueous solution on the IZO surface of the IZO substrate by spin coating; dry and dry to obtain the first hole buffer layer with a thickness of 20nm;

[0072] 3. Spin-coat the P3HT:PCBM toluene solution system on the surface of the first hole buffer layer. After the spin coating, anneal at 200°C for 80 minutes to obtain the first active layer with a thickness of 300n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of solar cells, and discloses a parallel type polymer solar cell. The parallel type polymer solar cell comprises an anode substrate, a first hole buffering layer, a first active layer, an n-type doped layer, a second active layer, a second hole buffering layer and an anode layer which are stacked sequentially. The active layers of two cell units can capture sunlight as much as possible, so that large quantities of electrons and holes are formed, a connecting layer for connecting two cells is the n-type doped layer capable of increasing conductivity of the cells, and hole and electron injection efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a parallel polymer solar cell and a preparation method thereof. Background technique [0002] In 1982, Weinberger et al. studied the photovoltaic properties of polyacetylene and produced the first real solar cell, but the photoelectric conversion efficiency at that time was extremely low (10 -3 %). Immediately afterwards, Glenis and others produced various polythiophene solar cells, but the problems they all faced at that time were extremely low open circuit voltage and photoelectric conversion efficiency. It was not until 1986 that C.W.Tang introduced p-type semiconductor and n-type semiconductor into the double-layer structure device for the first time, which greatly improved the photocurrent. Since then, taking this work as a milestone, organic polymer solar cells have flourished. developed. [0003] In 1992, Sariciftci et al. found that there was a phenomenon of fast light-induc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/46H01L51/48
CPCY02E10/549
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap