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Method for depositing a thin layer and product thus obtained

A thin layer and stacked layer technology, applied in chemical instruments and methods, coatings, metal material coating processes, etc., can solve problems such as expensive, increase the number of production line breaks, not adequately controlled, etc.

Active Publication Date: 2013-01-23
SAINT-GOBAIN GLASS FRANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because such very controlled cooling is very expensive, the annealing process is usually not sufficiently controlled to remove thermal stress in the glass, thereby increasing the number of cracks in the production line
Annealing also has the disadvantage that it is more difficult to cut the glass and cracks have a lower propensity to propagate linearly
However, it is expensive to subject the entire glass sheet to such a treatment (with the sole purpose of improving the crystallization of the layers)
In addition, tempered glass sheets can no longer be cut, and some thin layer buildup cannot withstand the high temperatures experienced during glass tempering

Method used

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  • Method for depositing a thin layer and product thus obtained
  • Method for depositing a thin layer and product thus obtained
  • Method for depositing a thin layer and product thus obtained

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] Substrates made of soda lime silica glass obtained by the float process and subsequently cut so as to have dimensions of 3 m wide by 6 m long were coated in known manner with a thin titanium dioxide layer of thickness 10 nm by magnetron sputtering. In a first example, a 20 nm thick silicon dioxide layer was inserted between the substrate and the titanium dioxide layer (sample A). In a second example, a titanium dioxide layer was deposited directly on the substrate (sample B).

[0087] Between the outlet of the magnetron sputtering line and the storage device, a device is inserted, which consists of:

[0088] - Emission is focused on TiO 2 layer on the 10.6-micron wavelength radiation of the CO 2 a laser with a spot width of about 0.3-0.5 mm; and

[0089] - A system for moving the laser rapidly (at about 3-5 m / s) in a direction perpendicular to the direction of travel of the substrate.

[0090] The temperature of the glass substrate during processing does not exceed ...

Embodiment 2

[0097] A substrate made of soda lime silica glass obtained by procédé float and subsequently cut so that its dimensions are width 3 m x length 6 m is covered in a known manner with a thin layer comprising a silver layer by the magnetron sputtering method Stacked layers, the silver layer provides low emissive properties to the glass.

[0098] This build-up comprises, in order (from substrate to outer surface), said oxide, metal or nitride layers, the geometrical thicknesses being indicated in parentheses:

[0099] Glass / SnO 2 (20nm) / ZnO(15nm) / Ag(8.5nm) / Ni-Cr / ZnO (15nm) / Si 3 N 4 (25nm).

[0100] Interposed between the outlet of the magnetron sputtering line and the storage unit, it consists of:

[0101] -YAG doped with neodymium (yttrium aluminum garnet, Y 2 Al 15 o 2 ) a laser that emits radiation with a wavelength of 1.09 microns focused onto the silver layer in a continuous or pulsed manner, with a spot width of about 0.3-0.5 mm; and

[0102] - A system for moving the...

Embodiment 3

[0113] In this example, the same covered substrate as in Example 2 was used, thus covered with a buildup layer comprising a silver layer.

[0114] The heating method is induction heating, using inductors whose geometries are especially suitable for the treatment of flat surfaces. The frequency is 2MHz and the power can vary around several kW.

[0115] The temperature of the glass substrate during processing (which lasts only a few seconds) does not exceed 150°C.

[0116] Table 3 below shows the changes in properties described in the case of Example 2.

[0117] table 3

[0118]

[0119] Changes in squared resistance and emissivity, which are quite comparable to those induced by infrared laser treatment, also demonstrate an increase in the crystallinity of the silver layer.

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Abstract

The invention relates to a method for processing at least one continuous thin layer deposited on the first surface of a substrate, characterised in that said at least one thin layer is heated at a temperature of at least 300 DEG C while maintaining a temperature lower than or equal to 150 DEG C at the surface of said substrate opposite said first surface in order to increase the crystallisation rate of said thin layer while maintaining it continuous and without any fusion step of said thin layer. The invention also relates to a material that can be obtained using said method.

Description

[0001] This application is a divisional application, the filing date of the parent case is January 4, 2008, the application number is 200880007306.2, and the title is "Method for Depositing Thin Layer and Obtained Product". technical field [0002] The field to which the present invention relates is thin inorganic layers, in particular those deposited on glass substrates. More particularly, it relates to a method of at least partial crystallization of said thin layers and certain products obtained using this method. Background technique [0003] Many thin layers are deposited on substrates (especially those made of flat or slightly curved glass) in order to give the resulting material special properties: optical properties, e.g. for radiation with a given wavelength range Reflective or absorbing properties; particular conductivity properties, or properties related to ease of cleaning or to the likelihood that the material is self-cleaning. [0004] These thin layers are mos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/06C03C17/36
CPCC30B1/08C03C17/36C03C23/0025C03C2217/212C03C2217/256C23C14/5806C03C2217/944H01L31/1884C23C14/5813H01L31/022466C03C17/3681C03C2218/32C03C17/09C03C17/2456Y02E10/50C03C2217/71C09K2323/00Y02T50/60
Inventor N.纳道A.卡申科U.希勒特R.吉
Owner SAINT-GOBAIN GLASS FRANCE