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Bonding method for improving bonding force and optical properties of bonding crystal

A technology of optical properties and bonding force, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve problems such as small bonding force, large optical loss, and increase the bonding force of gallium arsenide diffusion bonded crystals, etc., to achieve Effect of eliminating surface oxide and improving optical performance

Inactive Publication Date: 2013-02-06
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the problems of low bonding force and large optical loss of current diffusion-bonded gallium arsenide crystals, and propose a method for hydrogen ion removal of surface oxides, ultra-high vacuum pre-bonding, and high-temperature heat treatment to increase gallium arsenide Diffusion bonded crystal bonding force, reducing optical loss at the bonding interface

Method used

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  • Bonding method for improving bonding force and optical properties of bonding crystal
  • Bonding method for improving bonding force and optical properties of bonding crystal
  • Bonding method for improving bonding force and optical properties of bonding crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0021] After the surface of the wafer is polished, the surface of the wafer is cleaned with a chemical solution. The solution used for cleaning is: carbon tetrachloride, acetone, ethanol, and deionized water. After cleaning, the wafer is soaked in deionized water for subsequent processes. All operations Performed in a clean room.

[0022] After the samples are blown dry with nitrogen, use the ultra-high vacuum hydrogen ion cleaning device (CN201010279377.7, ultra-high vacuum ion source wafer cleaning system, authorization date: 2012-05-02) to complete the cleaning and pre-bonding process, such as figure 1 shown. Place the sample on the sample holder 7 and place it in the sputtering vacuum chamber B until the vacuum degree reaches 10 -5 At Pa, the hydrogen ion beam is generated by the hydrogen ion source 5, and the sample 6 to be cleaned is started to be cleaned by hydrogen ions. The ion beam current energy is set to 350eV, and the ion beam current density is 10 μA / cm 2 , bom...

Embodiment 2

[0029] After the surface of the wafer is polished, the surface of the wafer is cleaned with a chemical solution. The solution used for cleaning is: carbon tetrachloride, acetone, ethanol, and deionized water. After cleaning, the wafer is soaked in deionized water for subsequent processes. All operations Performed in a clean room.

[0030] After the sample was blown dry with nitrogen, the sample was placed on the sample holder 7 and placed in the sputtering vacuum chamber B until the vacuum degree reached 10 -5 Pa, the hydrogen ion beam is generated by the hydrogen ion source 5, and the sample 6 to be cleaned is started to be cleaned with hydrogen ions. The ion beam current energy is set to 500eV, and the ion beam current density is 5 μA / cm 2 , bombarded at room temperature for 15 min to reduce most of the oxides, and heated room B to 150 °C as a whole, and bombarded for 5 min.

[0031] After the bombardment is over, use the transfer rod 8 to transfer the cleaned wafer 6 to th...

Embodiment 3

[0035] After the surface of the wafer is polished, the surface of the wafer is cleaned with a chemical solution. The solution used for cleaning is: carbon tetrachloride, acetone, ethanol, and deionized water. After cleaning, the wafer is soaked in deionized water for subsequent processes. All operations Performed in a clean room.

[0036] After the sample was blown dry with nitrogen, the sample was placed on the sample holder 7 and placed in the sputtering vacuum chamber B until the vacuum degree reached 10 -5 Pa, the hydrogen ion beam is generated by the hydrogen ion source 5, and the sample 6 to be cleaned is started to be cleaned with hydrogen ions, and the ion beam current energy is set to 300eV, and the ion beam current density is 10μA / cm 2 , bombarded at room temperature for 15 min to reduce most of the oxides, and heated room B to 150 °C as a whole, and bombarded for 5 min.

[0037] After the bombardment is over, use the transfer rod 8 to transfer the cleaned wafer 6 t...

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Abstract

The invention relates to a bonding method for improving the bonding force and the optical properties of a bonding crystal, which can be applied to preparing a quasi-phase-matched nonlinear crystal, belongs to the field of nonlinear optical crystals and mainly solves the problems that the quasi-phase-matched crystal obtained through conventional bonding is large in optical loss and small in bonding force. According to the bonding method, a gallium arsenide crystal is selected as a bonding material, ultrahigh vacuum ion source cleaning equipment is utilized, and the loss of a bonding interface is reduced and the bonding force of the bonding crystal is improved by solution cleaning, ion cleaning, ultrahigh vacuum low-temperature bonding, low-pressure heat treatment and other technologies. The bonding method for improving the bonding force and the optical properties of the bonding crystal is mainly used for preparing the quasi-phase-matched gallium arsenide crystal with nonlinear frequency conversion in an infrared band.

Description

technical field [0001] The invention relates to a bonding method for improving the bonding force and optical properties of bonded crystals, which can be used to prepare quasi-phase-matched nonlinear crystals and belongs to the field of nonlinear optical crystals. Background technique [0002] Wafer bonding technology is to clean and activate two homogeneous or heterogeneous materials with clean surface and atomic level roughness, without using any adhesive substances, and directly bond them into one under certain conditions. Forces, molecular forces, and even atomic forces combine together. Wafer bonding technology has great advantages. The interface obtained by this technology has the advantages of firmness, smoothness and optical transparency. This interface is of great significance for the innovation of optical devices. Quasi-phase matching is an effective optical nonlinear frequency conversion method developed in recent years. The polarization direction inside the quasi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/06C30B33/02
Inventor 李强罗旭王昊雷訇惠勇凌姜梦华
Owner BEIJING UNIV OF TECH
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