Switching tube manufacturing method and switching tube etching apparatus

Abstract

A method for manufacturing a switch tube, including sequentially forming a control electrode (11), an insulation layer (12), an active layer (13) and a source and drain metal layer (14) of the switch tube on a glass substrate, performing patterning processing on the source and drain metal layer (14) and exposing the active layer (13), and then etching the exposed active layer (13) in a manner of gradually reducing the etching rate to form a channel of the switch tube. A device for etching a switch tube used this way can reduce the damage to a channel of a switch tube, improving the reliability of the switch tube.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a manufacturing method of a switch tube and an etching device for the switch tube. Background technique [0002] In the TFT (Thin Film Transistor, thin film transistor) manufacturing process, the 5-time photolithography process has a shorter production cycle and higher yield than the 7-time photolithography process, which can effectively reduce the number of exposures for TFT array formation , Therefore, in the production process of modern TFT-LCD, five photolithography processes are usually used to complete the production of TFT. The 5-step photolithography process is generally divided into back channel etching type (Back channel etching TFT) and back channel blocking type (Etch Stop TFT), and the process of back channel etching type is simpler than that of back channel blocking type, and is more suitable for large Mass production. [0003] Such as figure 1 As ...

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Problems solved by technology

[0004] Wherein, in the etching process of the channel 7 of the TFT, the method of one-step etching is mainly adopted, and the same gas flow rate, the same power and the same pressure are used to etch the a-Si layer 4 and the n+a-Si layer 5, namely The etching of a-Si layer 4 and n+a-Si layer 5 is completed in one step, and the same parameters are also used for etching during overetching, so that the etching energy is relatively strong during the etching process of the entire trench 7, and the trench The channel 7 will be bombarded by the dry etching plasma, and the a-Si layer 4 will be easily damaged, which will lead to poor electrical properties of the TFT; secondly, after the channel 7 is formed, the channel 7 is exposed on the outermost surface, and the protective During the silicon nitride CVD (Chemical Vapor Deposition, chemical vapor deposition) process, due to the exposure of the channel 7, the channel 7 will be bombarded by the CVD plasma, which further leads to worse electrical performance of the TFT

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