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C-Al2O3-delta composite film material with room-temperature ferromagnetism and preparation method thereof

A room temperature ferromagnetic, composite film technology, applied in the direction of magnetic film, magnetic film to substrate application, magnetic objects, etc., can solve problems such as affecting the magnetization of samples, and achieve convenient industrialized mass production, easy availability of materials, and preparation technology. simple effect

Inactive Publication Date: 2013-02-27
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size and density of nanoparticles affect the magnetization of the sample, and the application of nanoparticles to devices involves the adhesion of particles, etc., which has certain limitations.

Method used

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  • C-Al2O3-delta composite film material with room-temperature ferromagnetism and preparation method thereof
  • C-Al2O3-delta composite film material with room-temperature ferromagnetism and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1 Preparation of Al 2 o 3-δ film

[0020] Specific steps are as follows:

[0021] (1) Single crystal Si (100) was selected as the substrate, and the cleaning process of the substrate was as follows: soak in acetone solution and clean with ultrasonic wave for 10 min; rinse with deionized water, soak in alcohol and clean with ultrasonic wave for 10 min; rinse with deionized water, dilute 30% Soak in HF for 1min; rinse with deionized water and dry with nitrogen to avoid interference from magnetic impurities.

[0022] (2) Al was carried out on the cleaned Si substrate by the known method of radio frequency sputtering 2 o 3-δ For film growth, by adjusting the gas flow of Ar gas (99.999%), the sputtering pressure was 2.0 Pa, and the sputtering power was kept at 120 W;

[0023] (3) During radio frequency sputtering, when Al 2 o 3-δ When the thickness of the film reached 100 nm, the sputtering was stopped.

[0024] The M-H curve of the sample was measured with a...

Embodiment 2

[0025] Example 2 Preparation of C-Al with a C volume percentage of 1 vol% 2 o 3-δ Composite film

[0026] In addition to the sputtering target, it was replaced by Al with high-purity C particles whose area accounted for 0.56% of the target area. 2 o 3-δ The target (99.999%) is used as a composite target, and the rest are the same as Example 1. The volume percentage mentioned in the present invention is determined according to the target area percentage and the sputtering rate of the corresponding target.

[0027] Measure the M-H curve of the sample with PPMS (such as figure 1 shown), the sample was found to be ferromagnetic, and the saturation magnetization of the sample was 1.34 emu / cm 3 , the residual magnetization and coercivity are 0.14 emu / cm 3 and 25.60 Oe.

Embodiment 3

[0028] Example 3 Preparation of C-Al with a C volume percentage of 2 vol% 2 o 3-δ Composite film

[0029] In addition to the sputtering target, it was replaced by Al with high-purity C particles whose area accounted for 1.11% of the target area. 2 o 3-δ target

[0030] (99.999%) as a composite target, the rest are the same as Example 1.

[0031] Measure the M-H curve of the sample with PPMS (such as figure 1 shown), the sample was found to be ferromagnetic, and the saturation magnetization of the sample was 2.28 emu / cm 3 , the residual magnetization and coercivity are 0.16 emu / cm 3 and 86.40 Oe.

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Abstract

The invention discloses a composite film material with the chemical formula of C-Al2O3-delta and room-temperature ferromagnetism. In the formula, the percent by volume of C is smaller than or equal to 10 vol%. Relative to Al2O3, Al2O3-delta is an alumina film material under the anaerobic condition. The preparation method is as follows: using a radio frequency sputtering method to prepare a series of C-Al2O3-delta composite films with different contents of C. The Al2O3 matrix material is free from magnetism per se, while the composite film prepared by the interface limitation effect adopting the substrates of C and Al2O3-delta has the effect of magnetism. The composite film material is compatible with the mature semiconductor technology, so that the preparation technology is simple, and the magnetic C-Al2O3-delta composite film material can be potentially applied to novel magnetic memories and mini-spintronic devices and the like.

Description

technical field [0001] The invention relates to a C-Al with room temperature ferromagnetism 2 o 3-δ A composite thin film material belongs to the technical field of semiconductor magnetic nanometer material preparation. Background technique [0002] With the development of nanotechnology, a new research direction spanning semiconductor and magnetic materials—spintronics has emerged. In spintronics, electrons are the carriers of spin, which can be used for information storage and transmission. The findings demonstrate that magnetic semiconductors enable highly efficient spin injection. However, since the solid solubility of magnetic elements in semiconductors is not high, magnetic impurities are often precipitated, and the doping of magnetic elements is easy to form a second phase, so the study of ferromagnetism in pure semiconductors without any doping has attracted much attention. researcher's interest. Currently, oxide low-dimensional materials such as HfO 2 thin fil...

Claims

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Application Information

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IPC IPC(8): H01F10/193H01F41/14H01F41/18
Inventor 甄聪棉刘秀敏郑玉龙马丽潘成福侯登录
Owner HEBEI NORMAL UNIV
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