Cadmium telluride nanowire and preparation method thereof

Abstract

The invention provides a preparation method of a cadmium telluride nanowire, which comprises the following steps: S1. substrate processing: washing and drying zeolite, plating a metal film on the zeolite surface, and storing the treated zeolite in a drying box; S2. horizontally putting a quartz tube in a high-temperature pipe furnace, putting pure cadmium telluride powder at an air flow upwind port, and putting the treated zeolite at an air flow downwind port; S3. vacuumizing the high-temperature pipe furnace, and introducing inert gas to perform gas washing; S4. continuing introducing the inert gas, and heating the cadmium telluride powder and zeolite; and S5. continuing introducing the inert gas, and cooling the cadmium telluride powder and zeolite to room temperature together so that the generated cadmium telluride nanowire is attached to the zeolite surface. The method provided by the invention has the advantages of strong operability, low requirements for experimental equipment, and controllable experimentation process; and the cadmium telluride nanowire prepared by the method has the advantages of smooth surface and favorable shape, thereby having favorable application prospects.

Description

【Technical field】 [0001] The invention relates to the field of nanowires, in particular to a preparation method of cadmium telluride nanowires. 【Background technique】 [0002] Nanowire is a one-dimensional material whose two-dimensional (horizontal) length is limited to less than 100 nanometers, and one-dimensional (longitudinal) is relatively infinite, and has significantly different electrical and optical properties from its bulk. Cadmium telluride is a II-VI semiconductor compound that can produce a good photoresponse to visible light and plays an important role in photoelectric conversion applications such as solar power generation, infrared detection, and X-ray detection. The cadmium telluride nanowire prepared by using cadmium telluride as a raw material can be used to make a nanometer device capable of realizing infrared detection of a single nanowire. The photonic circuit composed of nano-devices with excellent performance can be used to manufacture the most develop...

AI Technical Summary

Problems solved by technology

The process of the liquid phase method is complicated and the surface of the cadmium telluride nanowires prepared by the liquid phase method is rough and difficult to control. Therefore, the cadmium telluride nanowires prepared by the liquid phase method greatly affect the control of its photoelectric conversion

There are many variable factors in the vapor phase deposition method, but the cadmium telluride nanowires prepared by the vapor phase deposition method are relatively smooth, because the growth conditions of the cadmium telluride nanowires are quite strict, especially when the catalyst is melted into small droplets at high temperature. Steps are the most critical, so there are very few examples of successful preparation of CdTe nanowires by vapor phase deposition. easy to accomplish

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