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Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof

An acceleration sensor and multi-layer metal technology, applied in the direction of measurement of acceleration, velocity/acceleration/shock measurement, electric solid devices, etc., can solve the problem of large overall size of the three-axis capacitive acceleration sensor, complex process of the three-axis capacitive acceleration sensor, To solve problems such as low authenticity rate, achieve good release effect, flexible wiring scheme, and shorten the connection distance

Inactive Publication Date: 2013-03-06
HEFEI UNIV OF TECH
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Problems solved by technology

Due to the use of three independent capacitive acceleration sensors, the overall volume of the three-axis capacitive acceleration sensor with this structure is bound to be too large, and additional wiring is required, which leads to the complicated process of the three-axis capacitive acceleration sensor with this structure. High cost and low authenticity rate

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  • Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof
  • Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof
  • Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof

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Embodiment Construction

[0034] specific implementation plan

[0035] Combine now Figure 1 to Figure 16 The present invention will be described in detail.

[0036] A monolithic integrated CMOS MEMS multilayer metal triaxial capacitive acceleration sensor, including a substrate 1, the triaxial acceleration sensor is composed of an anchor body, an acceleration detection mass, a fixed comb electrode, a movable comb electrode and a beam Wherein, the anchor body includes an angle anchor body 101, an x-axis anchor body 103, a y-axis anchor body 102, and a center anchor body 204; the acceleration proof mass includes a horizontal acceleration proof mass 105 and a z-axis proof mass 201; The fixed comb electrodes include the y-axis fixed comb electrode 106, the x-axis fixed comb electrode 108, and the z-axis fixed comb electrode 202; the movable comb electrodes include the y-axis movable comb electrode 107, the x-axis Toward the movable comb electrode 109 and the z-axis movable comb electrode 203; the beam i...

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Abstract

The invention provides a monolithic integrated three-axis accelerometer and a manufacturing method thereof so as to solve the defects in structure and manufacturing technology of the existing structural capacitive accelerometer. Three layers of metal Al thin films are deposited in the direction of an axis Z so as to form a comb pair sensitive electrode; four layers of metal Al / SiO2 thin films are deposited in the directions of an axis X and an axis Y so as to form comb pair sensitive electrodes, and the accelerations of the three axis directions are detected simultaneously by a single integrated structure. The accelerometer and the manufacturing method thereof have the following positive technical effects: the interconnection stray capacitance among accelerator devices in three axis directions is lowered remarkably, and high detection accuracy and lower noise performance are realized; since the accelerometer is provided with the multiple metal layers, compared with a microaccelerometer manufactured from the same material, namely polycrystalline silicon, the accelerometer is more flexible in wiring; a foldable beam is used in the structure of the accelerometer, so that the own stress of the accelerometer is released better, and therefore the influence of the stress on the system can be reduced effectively.

Description

technical field [0001] The invention relates to the technical field of micro sensor manufacturing, in particular to a single-chip integrated CMOS MEMS multi-layer metal triaxial capacitive acceleration sensor. Background technique [0002] MEMS microsensors are an important part of microelectromechanical systems, such as pressure sensors, chemical sensors, biosensors, accelerometers, etc. Among them, micromechanical accelerometers that integrate IC technology and MEMS technology are small in size, low in power consumption, and easy to use. The characteristics of integration, strong overload resistance and mass production are widely used in the core components of MIMU. With the development of MEMS design methods and process technology, micro-mechanical accelerometers have been widely used in various consumer fields such as missile guidance, household appliances, and automotive electronics. [0003] Capacitive accelerometers have become the most widely used type of micromachi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/125B81B7/00B81B7/02B81C1/00
Inventor 许高斌陈兴朱华铭段宝明
Owner HEFEI UNIV OF TECH
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