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Fabrication method of laser-induced air-gap light-emitting diode

A light-emitting diode, laser-induced technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as the influence of extraction efficiency that is not mentioned

Active Publication Date: 2016-01-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

However, it does not mention the impact of the roughened sapphire face on the LED extraction efficiency of GaN LED devices

Method used

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  • Fabrication method of laser-induced air-gap light-emitting diode

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Embodiment Construction

[0015] Please refer to Fig. 1, the present invention provides a method for manufacturing a laser-induced air-gap light-emitting diode, comprising the following steps:

[0016] Step 1: Take a substrate 21. The material of the substrate 21 is sapphire, Si, SiC, GaAs or glass. A laser is used to form a regular mesh air gap inside the upper surface of the substrate 21 at a distance of 30um. The inside of the substrate 21 is acted on by a laser to form regular or irregular air gaps; the air gap width is 100nm-5um, the air gap length is 500nm-5um, and the air gap distance is 3um-10um. Wherein the air gap of the substrate 21 is arranged in a single layer or in multiple layers;

[0017] Wherein the laser may be a nanosecond laser, a picosecond laser or a femtosecond laser. The laser wavelength can be 266nm, 355nm, 532nm or 1064nm.

[0018] Step 2: sequentially grow on the substrate 21 by MOCVD method: nucleation layer 22, n-type doped layer 23, the material of the n-type doped layer...

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Abstract

The invention discloses a manufacturing method of a laser-induced air-gap light emitted diode. The manufacturing method comprises the following steps of: 1) manufacturing a substrate, and forming regular reticular air gaps in the interior (which are 30 micrometers away from the upper surface of the substrate) of the substrate through a laser emitter; 2) sequentially growing a nucleating layer, an N-type doped layer, a multi-quantum well emitting layer, a P-type doped layer and an ITO (Indium Tin Oxide) layer on the substrate by adopting an MOCVD (Metal Organic Chemical Vapour Deposition) process; 3) photo-etching one side of the ITO layer downwards till reaching the interior of the N-type doped layer, so that a table surface is formed; 4) manufacturing a P-type electrode at the non-etched side of the ITO layer; and 5) manufacturing an N-type electrode on the table surface.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a laser-induced air-gap light-emitting diode. Background technique [0002] Because light-emitting diodes have the advantages of energy saving, environmental protection, and long life, in the next few years, light-emitting diodes may replace traditional lighting fixtures such as incandescent lamps and fluorescent lamps, and enter thousands of households. [0003] At present, nitride-based light-emitting diode materials are mainly heteroepitaxially grown on substrates such as sapphire, silicon, and silicon carbide. Due to the large difference between the refractive index of gallium nitride material and air, the light total reflection effect that occurs at the escape interface makes the light extraction of light-emitting diode devices very limited. T.Fujii, Y.Gao, et al. in Appl.Phys.Lett.84 (2004) 855. proposed a gallium nitride-based light-emitt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 谢海忠张逸韵鲁志远杨华李璟伊晓燕王军喜王国宏李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI