A kind of organic polymer film ultraviolet photodetector and preparation method thereof
A polymer film, ultraviolet light technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve the problems of poor device detection stability, high equipment requirements, and complex device processes, so as to improve device efficiency, Effects of improved responsivity, simple device structure
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example 1
[0035] Select the glass substrate and the transparent conductive electrode ITO, after cleaning them, spray ZnO solution with a concentration of 2 mg / ml on the surface, and dry to form an electron transport layer ZnO film (thickness is about 40 nm); ZnO and PVK (The ratio is 1:1) The mixed solution is prepared on the electron transport layer by the method of spin coating, as the photoactive layer, its thickness is about 100 nm; then the MoO3 solution with a concentration of 2 mg / ml is sprayed On the prepared photoactive layer, its thickness is about 7 nm; finally, conductive Ag nanowires are drip-coated on the surface, and dried to form a conductive anode. When the power density is 1.25 mW / cm 2 When irradiated with ultraviolet light with a center wavelength of 360 nm, the current responsivity is 630 A / W at a voltage of -9 V.
example 2
[0037] Select the glass substrate and the transparent conductive electrode ITO, after cleaning it, spin-coat the ZnO solution with a concentration of 20 mg / ml on the surface, and dry it to form the electron transport layer ZnO film layer (thickness is about 40 nm); A mixed solution composed of ZnO and PVK (ratio 1:2) was prepared on the electron transport layer by spin coating as a photoactive layer with a thickness of about 100 nm; then the concentration of 2 mg / ml The MoO3 solution was sprayed on the prepared photoactive layer with a thickness of about 7 nm; finally, the conductive Ag nanowires were drip-coated on the surface and dried to form a conductive anode. When the power density is 1.25 mW / cm 2 When irradiated with ultraviolet light with a central wavelength of 360 nm, the current responsivity is 690 A / W at a voltage of -9 V.
example 3
[0039] Select the glass substrate and the transparent conductive electrode ITO, after cleaning them, spray ZnO solution with a concentration of 2 mg / ml on the surface, and dry to form an electron transport layer ZnO film (thickness is about 40 nm); ZnO and PVK (The ratio is 1:1) The mixed solution is prepared on the electron transport layer by spin coating method, as the photoactive layer, its thickness is about 100 nm; then the MoO3 solution with a concentration of 25 mg / ml is rotated It is coated on the prepared photoactive layer with a thickness of about 5 nm; finally, conductive Ag nanowires are drop-coated on the surface, and dried to form a conductive anode. When the power density is 1.25 mW / cm 2 When irradiated with ultraviolet light with a central wavelength of 360 nm, the current responsivity is 720 A / W at a voltage of -9 V.
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