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Silicon carbide substrate, semiconductor device, and SOI wafer

A technology of silicon carbide substrate and silicon carbide, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of substrate materials that are not suitable for carrying high-frequency semiconductor components, large loss of silicon carbide, etc. problem, to achieve excellent heat dissipation, low frequency loss effect

Inactive Publication Date: 2013-03-27
MITSUI ENG & SHIPBUILD CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among these dielectric ceramics, silicon carbide is well-known for its high mechanical strength and stable chemical properties. However, silicon carbide used in conventional mechanical parts has a large loss in the high-frequency region and is not suitable. As a substrate material for mounting high-frequency semiconductor elements

Method used

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  • Silicon carbide substrate, semiconductor device, and SOI wafer
  • Silicon carbide substrate, semiconductor device, and SOI wafer
  • Silicon carbide substrate, semiconductor device, and SOI wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] figure 1 The silicon carbide substrate S of Example 1 is shown. The silicon carbide substrate S has a two-layer structure including a first silicon carbide layer 1 having a thickness D1 and a second silicon carbide layer 2 having a thickness D2 formed on the surface of the first silicon carbide layer 1 . The first silicon carbide layer 1 and the second silicon carbide layer 2 are both composed of polycrystalline silicon carbide, the second silicon carbide layer 2 has a smaller high-frequency loss than the first silicon carbide layer 1, and the first silicon carbide layer 1 It has higher thermal conductivity than the second silicon carbide layer 2 in the thickness direction.

[0037] For example, the thermal conductivity of the second silicon carbide layer 2 is about 100 W / mK relative to the thermal conductivity of the first silicon carbide layer 1 of 260 W / mK.

[0038] In addition, the high-frequency loss at a frequency of 20 GHz has a large value of about 50 dB / mm wi...

Embodiment 2

[0060] Figure 4 The structure of the semiconductor device of Example 2 is shown. In this semiconductor device, a semiconductor element 3 is bonded to the surface of the second silicon carbide layer 2 of the silicon carbide substrate S shown in the first embodiment. Semiconductor element 3 is bonded to the surface of second silicon carbide layer 2 by brazing or the like. Alternatively, a specific conductive pattern may be formed on the surface of the second silicon carbide layer 2, and the semiconductor element 3 may be bonded to the conductive pattern by solder.

[0061] According to the semiconductor device with such a structure, the silicon carbide substrate S has a small high-frequency loss of 2 dB / mm or less at a frequency of 20 GHz on the surface side of the second silicon carbide layer 2 on the mounting surface of the semiconductor element 3, and 200 W / mK or more. High thermal conductivity, even if the semiconductor element 3 is an element operating in a high-frequenc...

Embodiment 3

[0064] Figure 5 The structure of the SOI (Silicon on Insulator) wafer of Example 3 is shown. The SOI wafer is formed with SiO on the surface of the second silicon carbide layer 2 of the silicon carbide substrate S shown in Example 1. 2 Simultaneously with the insulating layer 4 , a silicon layer 5 is formed on the surface of the insulating layer 4 . Circuit elements are formed using the silicon layer 5 .

[0065] In this SOI wafer, the silicon carbide substrate S also has a small high-frequency loss of 2 dB / mm or less at a frequency of 20 GHz on the surface side of the second silicon carbide layer 2, and a thermal conductivity of 200 W / mK or more. Layer 5 is used to form an element operating in a high-frequency region, and a highly reliable device capable of rapid operation can also be realized.

[0066] In addition, the silicon carbide substrate S has 10 on the surface side of the second silicon carbide layer 2 4 A high specific resistance of Ωcm or more enables highly r...

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Abstract

Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (1), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (2), which is composed of a polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer (2) has a high-frequency loss smaller than that of the first silicon carbide layer (1), the first silicon carbide layer (1) has a thermal conductivity higher than that of the second silicon carbide layer (2), and on the surface side of the second silicon carbide layer (2), the high-frequency loss at a frequency of 20 GHz is 2dB / mm or less, and the thermal conductivity is 200W / mK or more.

Description

technical field [0001] The present invention relates to a silicon carbide substrate, a semiconductor device, and an SOI wafer, and more particularly, to a silicon carbide substrate for mounting semiconductor elements operating in a high-frequency region, and a semiconductor device and an SOI wafer using the silicon carbide substrate. Background technique [0002] Conventionally, semiconductor elements that operate in high-frequency regions have been used in electronic devices such as mobile phones and various communication equipment, and various dielectric ceramics have been proposed as substrate materials for mounting such semiconductor elements. [0003] Among these dielectric ceramics, silicon carbide is well-known for its high mechanical strength and stable chemical properties. However, silicon carbide used in conventional mechanical parts has a large loss in the high-frequency region and is not suitable. As a substrate material for mounting high-frequency semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/15C30B29/36H01L27/12
CPCH01L29/78603H01L29/1608H01L23/15C30B29/36H01L23/3735H01L21/7624H01L2924/0002H01L2924/00H01L27/12H01L21/84
Inventor 川本聪中村将基
Owner MITSUI ENG & SHIPBUILD CO LTD
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