Etching method of semiconductor structure

Abstract

An etching method of a semiconductor structure includes: providing a semiconductor substrate with a to-be-etched material layer on the surface; forming a mask layer on the surface of the to-be-etched material layer; using the mask layer as a mask to etch the to-be-etched material layer, and allowing a radio-frequency power source to output radio-frequency power in a first pulse manner and a bias power source to output bias power in a second pulse manner after introducing reactant gas, wherein first pulse and second pulse are different in pulse frequency. Etching is fast. In addition, the size of an etching process window and the time-varying distribution of the etching speed can be regulated by controlling pulse frequency ratio of the radio-frequency power source to the bias power source.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an etching method for a semiconductor structure. Background technique [0002] In the semiconductor process, the process of etching the semiconductor material generally includes a dry etching process or a wet etching process, wherein, since the dry etching process using plasma for etching can effectively control the size of the etching opening The size has become the most mainstream etching process at present. Existing processes usually use glow discharge, radio frequency signal, corona discharge, etc. to form plasma. Among them, when using radio frequency signals to form plasma, the density and energy of the formed plasma can be controlled by adjusting the processing gas composition, frequency of radio frequency power, coupling mode of radio frequency power, air pressure, temperature and other parameters, so as to optimize the plasma treatment effect . Therefore, in existing semico...

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Problems solved by technology

However, the etching rate of the capacitively coupled plasma etching device of the prior art is relatively slow

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