Silicon-based germanium epitaxial structure and application thereof

Abstract

The invention discloses a non-waveguide near-infrared detector based on silicon-based germanium epitaxy and a method for preparing the non-waveguide near-infrared detector. The non-waveguide near-infrared detector comprises an n-type Si substrate, an air porous or dielectric column type photonic crystal prepared in an SiO2 layer deposited on the Ge / Si buffer layer, a Ge-based epitaxial film formed on the photonic crystal, P-type Si formed on the Ge-based epitaxial film, an antireflective layer formed on the P-type Si, an n-type Si contact electrode Al, a P-type Si contact electrode and a passivation layer, wherein the n-type Si contact electrode Al is prepared on a step which is formed by etching the outer side of the antireflective layer until the interior of the n-type Si substrate; the P-type Si contact electrode is prepared a on a step which is formed by etching the inner side of the antireflective layer until the upper surface of the P-type Si; and the passivation layer is formed on the etched antireflective layer. The problems of stress release caused by Ge and Si lattice mismatch, application of photonic band gap effects of two-dimensional photonic crystals in existing near-infrared detectors, and the like are solved.

Description

technical field [0001] The invention belongs to the field of semiconductor integration technology, and mainly relates to the substrate structure design of a near-infrared detector based on silicon-based germanium epitaxy. technology, especially a non-waveguide near-infrared detector based on silicon-based germanium epitaxy and its preparation method. Background technique [0002] With the wide application and in-depth study of modern information technology, optoelectronic integration technology represented by optical fiber communication and optical interconnection has put forward more and more urgent requirements for semiconductor optoelectronic devices and circuits. Manufacture of photodetectors with response wavelengths of 1.3 μm and 1.55 μm, high rate, high quantum efficiency and low dark current, and the realization of optoelectronic integrated receiver chips have always been the goals pursued by people. [0003] Although the process of photodetectors made of III-V mate...

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Problems solved by technology

[0006] In view of the above existing problems and deficiencies, the purpose of the present invention is mainly to provide a non-waveguide near-infrared detector based on silicon-based germanium epitaxy and its preparation method, so as to solve the problem of the two-dimensional photonic crystal photonic band gap in the existing near-infrared detector. effect, and the release of stress caused by lattice mismatch between Ge and Si

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