Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Light-emitting diode grain and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as poor electrical properties and poor light transmission

Inactive Publication Date: 2013-04-03
ZHANJING TECH SHENZHEN +1
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of fabricating the transparent conductive layer structure on the semiconductor light-emitting structure of the light-emitting diode, when the transparent conductive layer is made thin, it has high light transmittance, but the electrical property is poor; when the transparent conductive layer is made thick, the electrical property is poor. Good performance but poor light transmission, so it is inevitable that there will be a trade-off between the light output and electrical properties of the light-emitting diode grains and cannot be balanced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting diode grain and manufacturing method thereof
  • Light-emitting diode grain and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] see figure 1 The light emitting diode die 10 provided by the embodiment of the present invention includes a substrate 11 , a first semiconductor layer 12 , an active layer 13 , a second semiconductor layer 14 , a transparent conductive layer 15 , a first electrode 16 and a second electrode 17 .

[0017] The material of the substrate 11 can be one of sapphire (Al2O3), silicon carbide (SiC), silicon (Si), gallium nitride (GaN) or zinc oxide (ZnO), depending on the desired physical properties and optical Features and cost budget.

[0018] The first semiconductor layer 12 , the active layer 13 and the second semiconductor layer 14 are sequentially formed on the substrate 11 . The first semiconductor layer 12 and the second semiconductor layer 14 are semiconductor layers of different doping types. In this embodiment, the first semiconductor layer 12 is an N-type semiconductor layer, and the second semiconductor layer 14 is a P-type semiconductor layer. In other implementat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a light-emitting diode grain. The light-emitting diode grain comprises a first semiconductor layer, an active layer, a second semiconductor layer as well as a transparent conducting layer which are successively arranged, wherein the transparent conducting layer comprises a first transparent conducting layer and a second transparent conducting layer, and the first transparent conducting layer and the second transparent conducting layer are both made of indium oxide tin material; and the oxygen content of the first transparent conducting layer is lower than that of the second transparent conducting layer, and the thickness of the first transparent conducting layer is less than that of the second transparent conducting layer. The invention also relates to a manufacturing method of the light-emitting diode grain.

Description

technical field [0001] The invention relates to a semiconductor structure and a manufacturing method thereof, in particular to a light-emitting diode crystal grain and a manufacturing method thereof. Background technique [0002] An existing light emitting diode (Light Emitting Diode, LED) grain includes a substrate, a semiconductor light emitting structure grown on the substrate, and two electrodes. In the industry, transparent electrodes are generally used to replace traditional metal electrodes so that the current is evenly distributed to improve the luminous efficiency of the semiconductor light emitting structure. [0003] However, the use of transparent electrodes must ensure that they have low contact resistivity, high light transmittance and low resistivity of the electrode itself. In the process of fabricating the transparent conductive layer structure on the semiconductor light-emitting structure of the light-emitting diode, when the transparent conductive layer i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42
CPCH01L33/42
Inventor 沈佳辉洪梓健
Owner ZHANJING TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com