Light emitting diode provided with patterned substrate

A technology of light-emitting diodes and graphics, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as forward voltage, light intensity, reverse leakage current, wavelength uniformity, etc., to improve wavelength uniformity, improve internal Effect of Quantum Efficiency and Brightness Improvement

Inactive Publication Date: 2013-04-17
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after epitaxial growth of a uniform patterned substrate, the residual stress and crystal defects in the chip structure still affect the performance of optoe

Method used

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  • Light emitting diode provided with patterned substrate
  • Light emitting diode provided with patterned substrate

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0020] Example 1

[0021] See attached figure 1 , A light emitting diode with a patterned substrate, its structure includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The substrate is divided into 5 concentric ring-shaped areas with the center as the center, and the ring-shaped area has patterns distributed in an array; the vertical depth of the pattern is 3 microns, the cross-section of the pattern is elliptical, and the elliptical shape in the 5 ring-shaped areas The horizontal size is 2, 4, 6, 8, and 10 microns from the inside to the outside, the longitudinal size is 1.5, 3, 4.5, 6, and 7.5 microns, and the pattern pitch is 4, 8, 12, 16, and 20 microns.

Example Embodiment

[0022] Example 2

[0023] A light-emitting diode with a patterned substrate. Its structure includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The substrate is divided into 6 concentric ring-shaped areas with the center as the center, and the ring-shaped area has patterns distributed in an array; the cross-section of the pattern is elliptical, and the lateral size of the ellipse in the 6 ring-shaped areas is 2 from the inside to the outside. , 2.1, 2.2, 2.3, 2.4, 2.5 microns, the vertical dimension is 1.5, 1.6, 1.7, 1.8, 1.9, 2 microns, the pattern pitch is 4, 4.2, 4.4, 4.6, 4.8, 5 microns, the vertical depth of the pattern The order is 0.5, 0.6, 0.7, 0.8, 0.9, 1 micron.

Example Embodiment

[0024] Example 3

[0025] A light-emitting diode with a patterned substrate. Its structure includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The substrate is divided into 5 concentric ring-shaped areas with the center as the center, and the ring-shaped area has patterns distributed in an array; the cross-section of the pattern is square, and the horizontal and longitudinal dimensions of the square in the 5 ring-shaped areas are from the inside to the outside. The order is 1, 1.5, 2, 2.5, 3 microns, the pattern pitch is 2, 9, 16, 23, 30 microns, and the vertical depth of the pattern is 0.5, 0.6, 0.7, 0.8, 0.9 microns.

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Abstract

The invention provides a light emitting diode provided with a patterned substrate. The substrate is divided into 5-8 concentric circular areas with the center as the center of a circle. The distance from the size of a pattern in a same circular area to the pattern is equal, and the distances of the sizes of the patterns in different circular areas to the patterns are increased sequentially from inside to outside. According to the invention, the residual stress in the epitaxial growth process can be reduced, the crystal defect is reduced, and the internal quantum efficiency is improved, so that, the wavelength uniformity of a chip is improved, the chip leakage is improved, and the brightness of the chip is improved. The technology has a more remarkable effect when a large growth substrate is used, so that the warpage of the light emitting diode can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, in particular to a light emitting diode with a pattern substrate. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. [0003] The traditional chip manufacturing process is to prepare hundreds or even thousands of chips on a substrate at the same time. There is a certain distance between each chip. After these chips are prepared, they are separated by dicing and cutting. Subsequent encapsulation and other processes obtain light-emitting diodes. Generally, the chip structure of a light-emi...

Claims

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Application Information

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IPC IPC(8): H01L33/20
Inventor 肖志国唐勇武胜利李倩影孙英博薛念亮
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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