A preparation method of composite crucible used at ultra-high temperature

A composite type, crucible technology, applied in the direction of metal material coating process, coating, solid-state diffusion coating, etc., can solve the problems of high brittleness and easy cracking of carbide materials, and achieve the elimination of differences in the degree of carbonization and stress in the crucible Effect

Active Publication Date: 2014-10-01
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the carbide material is brittle, and it is easy to crack under the impact of high and low temperature.

Method used

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  • A preparation method of composite crucible used at ultra-high temperature
  • A preparation method of composite crucible used at ultra-high temperature
  • A preparation method of composite crucible used at ultra-high temperature

Examples

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Embodiment

[0020] Example: refer to figure 1 , a method for preparing a composite crucible used at an ultra-high temperature is carried out according to the following steps:

[0021] Step 100 (A), pretreatment of the tantalum crucible: soak the original tantalum crucible in the sulfuric acid solution container, completely submerged, heat the sulfuric acid solution container on an electromagnetic cooker until the sulfuric acid solution is boiling, and soak in the sulfuric acid solution boiling state for 60 minutes After cooling, the tantalum crucible was taken out, rinsed with deionized water, and dried with nitrogen.

[0022] Step 110 (B), crucible assembly: place the tantalum crucible 2 in the graphite crucible 1, and then place the graphite cup 3 in the tantalum crucible 2, the wall thickness of the graphite cup 3 is 2 mm, and the inner wall of the graphite crucible 1 and the outer wall of the tantalum crucible 2 The distance between the inner wall of the tantalum crucible 2 and the o...

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Abstract

The invention relates to a preparation method of a crucible utilized in a crystal growth process, and particularly relates to a preparation method of a combination type crucible utilized at ultra-high temperature. The method is performed according to the following steps of: (1) pretreating a tantalum crucible; (B) assembling a crucible assembly; (C) charging and carburizing; (D) removing a carbon-based material; (E) carrying out annealing heat treatment; and (F) cleaning and drying to prepare a tantalum carbide-tantalum-tantalum carbide three-layer combination type crucible. By adopting the method, the tantalum crucible is directly changed into the tantalum carbide-tantalum-tantalum carbide three-layer combination type crucible; the carburizing degree difference generated due to nonuniform temperature in the process of changing the tantalum crucible into the tantalum carbide-tantalum-carbonization candid three-layer combination type crucible is eliminated through the annealing heat treatment process, and the internal stress of a crucible body is eliminated. The combination type crucible reserves the characteristic of high strength and difficulty to crush of tantalum and has the high-temperature corrosion resistance ability of tantalum carbide, and is suitable for a high-temperature high-corrosion crystal growth or high-purity ceramic sintering environment.

Description

technical field [0001] The invention relates to a preparation method of a crucible used in a single crystal growth process, in particular to a preparation method of a composite crucible used at an ultrahigh temperature. Background technique [0002] Aluminum nitride (AlN) single crystal material is an ideal substrate material for the development of new high-power microwave devices and short-wavelength optoelectronic devices, but it is still difficult to obtain AlN bulk single crystal material. The theoretically calculated melting point of AlN is 2800°C, and the dissociation pressure is 20MPa. Therefore, it is difficult to grow single crystals by using the melt Czochralski method or temperature gradient solidification method like Si and GaAs. One of the more promising methods at present is the PVT (Physical Vapor Transport, physical vapor transport) method. The PVT growth principle of AlN is to sublimate and decompose high-purity AlN powder at the high-temperature source reg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C8/64
Inventor 齐海涛
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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