Process method for preparing hexagonal phase ZnS film at low temperature
A process method and hexagonal phase technology are applied in the field of low-temperature preparation of hexagonal phase ZnS thin films, which can solve the problems that the hexagonal phase ZnS thin films are not mentioned, and achieve the effects of dense adhesion, good uniformity and low preparation process cost.
Inactive Publication Date: 2013-04-24
YANGZHOU UNIV
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Problems solved by technology
At present, the method of preparing hexagonal ZnS thin film based on CdS thin film as buffer layer and below 200 °C has not been mentioned.
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[0017] The target materials for the deposition of the thin film are respectively compressed with ZnS powder and CdS powder through a press with a uniaxial pressure of 18-20 tons to form a circular target with a diameter of 3.5 cm and a thickness of 3 mm, and then solid-phase sintering at atmospheric pressure The method heats up to 1100°C in a tube furnace, and maintains it for 100 minutes after sintering, and then cools to room temperature naturally to obtain ZnS and CdS target materials, and the prepared ZnS and CdS target materials are all hexagonal phase structure after measurement and analysis; The purity of the ZnS powder and CdS powder are both 99.99%.
[0018] Select sapphire as the substrate, place the sapphire substrate in deionized water and alcohol successively, after 30 minutes of microwave ultrasound, rinse with deionized water and dry, and place it in the substrate tank of the vacuum chamber of the pulse laser deposition apparatus. At the same time, the prepared ZnS...
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Abstract
The invention relates to a process method for preparing a hexagonal phase ZnS film at low temperature. According to the process method, the characteristics of a CdS hexagonal phase structure are utilized, a CdS film layer is deposited on a sapphire substrate firstly, and the CdS is adopted and used as a buffering layer which effectively solves the problem that crystal lattices between the ZnS film and the substrate are mismatched. By utilizing the method, the growth of the hexagonal phase ZnS film is induced at low temperature, and thus the hexagonal phase ZnS film can be prepared. The technology solves the problem that the conventional chemical method is difficultly utilized for preparing the hexagonal phase ZnS film at low temperature. The ZnS / CdS alternating film layers prepared by the process method are densely adhered as well as the bottom layer and the sapphire substrate; the film is high in crystallization quality and excellent in uniformity, and the light transmittance can be more than 85%, so that the film can be used as the buffering layer of a thin-film solar cell or a material for a window; and simultaneously, the hexagonal phase ZnS film has a high luminescence peak at 500nm, so that the hexagonal phase ZnS film also can be used for developing a high-brightness green light emitting device.
Description
Technical field [0001] The invention relates to a process method for preparing a hexagonal phase ZnS film at low temperature, and belongs to the technical field of photoelectric materials. Background technique [0002] ZnS is a direct bandgap luminescent material with superior performance of II-VI. It has two crystal phases: cubic and hexagonal. Its band gap is 3.72 eV (cubic phase structure) and 3.77 eV (hexagonal phase structure). With characteristics, ZnS film has a very wide range of applications in flat panel displays, thin film electro-optical devices, infrared windows, photodetectors, sensors, lasers, etc. The crystalline phase structure of the ZnS film plays a vital role in the physical properties of the above-mentioned devices. For example, compared to the cubic phase, the hexagonal ZnS film is more suitable to replace the CdS film as the buffer layer or window material of the CdTe thin film solar cell. However, since the more stable structure of ZnS at room temperatur...
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Login to View More IPC IPC(8): C23C14/06C23C14/28
Inventor 曾祥华张伟
Owner YANGZHOU UNIV