Method for preparing nano-array patterns by icp etching gan-based multiple quantum wells

Abstract

A preparation method of a nano array pattern through inductive coupling plasma (ICP) GaN-based multiple quantum wells includes the following steps: taking a substrate made of silicon or sapphire or gallium nitride, sequentially growing a GaN buffering layer, an n-type GaN layer, an InGaN / GaN quantum well layer and P-type GaN on the substrate in an epitaxial mode, forming a primary GaN substrate, wherein the thickness of the whole quantum well layer is about 50nm-200nm, and periodicity of the whole quantum well layer is 2-10, carrying out vacuum evaporation on a metal layer through physical vapor deposition (PVD) on the GaN substrate, carrying out high-temperature anneal on the substrate of the metal layer grown due to the vacuum evaporation, utilizing ICP etching process, etching the GaN substrate to the n-type GaN layer or a part of the n-type GaN layer, and forming an InGan / GaN nano column.

Description

technical field [0001] The invention relates to the field of photoelectric devices, in particular to ICP etching GaN-based multi-quantum wells to prepare nanometer array patterns. Background technique [0002] Group III nitride materials, because of their continuously adjustable bandgap from 0.7ev to 6.2ev, combined with the advantages of direct bandgap and optoelectronic applications, make them the best choice for the development of near-infrared-visible-ultraviolet band semiconductor optoelectronic devices. One of the best materials. In recent years, with the extensive research and application of gallium nitride materials, the preparation technology of blue-violet light-emitting diodes (LEDs) and high-mobility transistor materials has been relatively mature, and the third-generation GaN-based semiconductor materials and devices have gradually moved towards industrialization 【1、2、3】 . However, gallium nitride light-emitting diodes are currently facing many problems. For ...

AI Technical Summary

Problems solved by technology

There are complex chemical and physical processes in the ICP etching process. The physical action will cause great damage to the substrate material and structure, and the defect of the chemical process is that the etching is isotropic.

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