Avalanche photodiode based on non-N-type indium phosphid (InP) substrate and preparation method thereof
An avalanche photoelectric and diode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of difficult to control edge breakdown, difficult to accurately control the thickness of the avalanche multiplier layer, etc., to reduce dark current, reduce area, and suppress edges. The effect of breakdown
Inactive Publication Date: 2013-05-15
WUHAN TELECOMM DEVICES
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[0008] The purpose of the present invention is to solve the problems in the existing avalanche photodiode technology that it is difficult to control the edge breakdown and precisely control the thickness of the avalanche multiplication layer, and to provide an easily mass-produced avalanche photodiode based on a non-N-type InP substrate. Diode and its preparation method
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[0054] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.
[0055] An embodiment of the present invention provides an avalanche photodiode based on a non-N-type InP substrate, the structure of which is as follows Image 6 As shown, when the substrate 1 is a p-InP type substrate, p-InP buffer layer 2, p-AlInAs diffusion barrier layer 3, low-doped n-InP avalanche multiplication layer 4, n- InP electric field control layer 5 , n-InGaAsP gradient layer 6 , nInGaAs light absorption layer 7 , semi-insulating InP window layer 8 , and InGaAs contact layer 9 . An n-type conductive region 10 is formed by diffusion in the p-InP or semi-insulating InP window layer 8 , so that the InGaAs contact layer 9 is correspondingly located above the n-type condu...
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The invention provides an avalanche photodiode based on a non-N-type indium phosphid (InP) substrate and a preparation method thereof. The avalanche photodiode comprises the InP substrate. A buffer layer, a diffusion impervious layer, an avalanche multiplication layer, an electric field control layer, a gradual change layer, a light absorption layer, a window layer and a contact layer are sequentially formed on the surface of the InP substrate. The InP substrate is a P-type substrate or a semi-insulating substrate. The diffusion impervious layer can reduce diffusion of doped atoms in the buffer layer to the avalanche multiplication layer. The window layer is a semi-insulating InP window layer. A conduction region formed by diffusion is arranged in the center of the window layer. Portions of the window layer, outside the conduction region, are provided with annular channels. Due to the annular channels of the avalanche photodiode based on the non-N-type InP substrate, the area of a whole PN junction can be effectively reduced, and dark current of the avalanche photo diode (APD) can be reduced to nA level; besides, diffusion is needed only for one time, and edge breakdown of the InGaAs / InP avalanche photodiode can be restrained; and the thickness of the multiplication layer can be accurately controlled.
Description
technical field [0001] The invention relates to an avalanche photodiode, in particular to an InGaAs / InP avalanche photodiode (APD) which is easy to mass-produce and is applied to optical communication. Background technique [0002] At present, the avalanche photodiodes that have been used in optical communication adopt the structure of separating the avalanche region and the absorption region, that is, growing n-InP buffer layer, low-doped InGaAs light absorption layer, and composition gradient on the n-InP substrate in sequence. InGaAsP layer, n-InP field control layer, low-doped n-InP window layer. In the above structure, Zn or Cd is thermally diffused into the low-doped n-InP window layer to form a p-type doped InP region, and the low-doped InGaAs light-absorbing layer corresponding to the p-type doped InP region The photodetection region of the avalanche photodiode is formed. Because there is a diffused arc-shaped edge part in the above-mentioned p-type doped InP regio...
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IPC IPC(8): H01L31/107H01L31/0352H01L31/18
Inventor 岳爱文胡艳李晶王任凡
Owner WUHAN TELECOMM DEVICES