Nano polishing solution for chemical/mechanical polishing

Abstract

The invention relates to a nano polishing solution for chemical / mechanical polishing. The nano polishing solution comprises fluoborate, a nano abradant, a surfactant, inorganic acid, and solvent deionized water. The nano polishing solution has the advantages of good stability and less damage, is easy to clean, and does not corrode equipment. The polishing solution is suitable for the chemical / mechanical polishing of a hafnium-based material in the semiconductor field. The polishing solution is used for polishing hafnium oxide, the polishing speed can be controlled at 100-200nm / min, and the polished surface roughness can be lowered to less than 1nm.

Description

technical field [0001] The invention relates to microelectronic auxiliary materials and processing technology, in particular to a nano-polishing liquid for chemical mechanical polishing. technical background [0002] The increase of circuit density has become a major demand of today's microelectronics industry, which means that more electronic components need to be placed on the same size chip, and the reduction of device size is the general trend. The reduction of the characteristic size of MOS transistors requires the reduction of the thickness of the gate dielectric layer, and SiO2, which is a traditional gate dielectric layer material 2， When its size is reduced to 1.4nm and below, the impact of excessive leakage current and unstable interface characteristics on device performance can no longer be ignored. Therefore, a new type of high-k material is selected to replace the traditional SiO 2 A series of problems such as increasing the corresponding physical thickness of ...

AI Technical Summary

Problems solved by technology

[0003] All of the above are etching techniques for hafnium-based materials, but research on chemical mechanical polishing (CMP) of hafnium oxide or hafnium-based materials is rarely reported

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