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A method of manufacturing a film capacitor with a composite substrate

A technology of thin film capacitors and composite substrates, applied in thin film/thick film capacitors, stacked capacitors, fixed capacitor electrodes, etc., can solve problems such as increased leakage current, insufficient purity, and defects in the combination of thin film capacitors and printed circuit boards

Active Publication Date: 2016-02-17
安徽立查信息科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the nickel substrate contains undesired impurities, or its purity is insufficient, it will limit the increase in the capacitance of the film capacitor, and may increase its leakage current, thereby affecting the quality of the film capacitor
[0004] Moreover, film capacitors are generally combined on printed circuit boards by embedding, and the circuit patterns of existing printed circuit boards are generally made of metal copper. Therefore, there are still defects in the combination of existing nickel substrate film capacitors and printed circuit boards.

Method used

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  • A method of manufacturing a film capacitor with a composite substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] see figure 1 , the manufacturing method of the film capacitor with composite substrate comprises the steps in turn:

[0022] (1) Prepare raw materials with the following ratio: nickel greater than or equal to 99.98% by weight. The remaining 0.02% by weight is various impurities. The various impurities include: 0.0005-0.0008% by weight of manganese, 0.005-0.008% by weight of aluminum, 0.001-0.002% by weight of silver, 0.0005-0.001% by weight of chromium, 0.004-0.006% by weight of iron, 0.0005-0.0012 % by weight of silicon and 0.001-0.002% by weight of antimony and 0.001-0.002% by weight of tantalum;

[0023] (2) Rolling for the first time: after the above-mentioned raw material is melted, it is rolled for the first time, and the nickel substrate obtained by the rolling for the first time is a foil shape, and its thickness is 3-5 millimeters;

[0024] (3) thermal annealing for the first time, the nickel substrate foil obtained in step (2) is thermally annealed for the ...

Embodiment 2

[0035] see figure 1 , the manufacturing method of the film capacitor with composite substrate comprises the steps in turn:

[0036] (1) Prepare raw materials with the following ratio: nickel greater than or equal to 99.98% by weight. The remaining 0.02% by weight is various impurities. The various impurities include: 0.0005-0.0008% by weight of manganese, 0.005-0.008% by weight of aluminum, 0.001-0.002% by weight of silver, 0.0005-0.001% by weight of chromium, 0.004-0.006% by weight of iron, 0.0005-0.0012 % by weight of silicon and 0.001-0.002% by weight of antimony and 0.001-0.002% by weight of tantalum;

[0037] (2) Rolling for the first time: after the above-mentioned raw material is melted, it is rolled for the first time, and the nickel substrate obtained by rolling for the first time is a foil shape, and its thickness is 4 millimeters;

[0038] (3) Thermal annealing for the first time, the nickel substrate foil obtained in step (2) is thermally annealed for the first ...

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Abstract

The invention discloses a manufacture method of a thin-film capacitor with a composite substrate. The manufacture method comprises the steps of firstly, obtaining the composite substrate through three-time rolling and three-time annealing, wherein the composite substrate comprises a copper substrate and a nickel substrate in a combined mode, then, depositing a dielectric layer made of tetragonal phase lead zirconate titanate (PbZr1-xTixO3) on the composite substrate, and finally depositing an electrode layer on the dielectric layer, and therefore forming the thin-film capacitor with the composite substrate.

Description

technical field [0001] The invention belongs to the field of film capacitors, in particular to a method for manufacturing a film capacitor with a composite substrate. Background technique [0002] In existing film capacitors, higher requirements are placed on the capacitance of the capacitor. In the prior art, a film capacitor generally includes a substrate, a dielectric layer and an electrode layer. The microstructure of the dielectric layer is a key factor in determining the performance of the capacitor. Therefore, there are strict requirements on the material configuration of the thin film capacitor substrate. [0003] Most existing film capacitor substrates are made of metallic nickel. In order to increase the capacitance without affecting the performance of the capacitor, the purity and impurity composition of the nickel substrate cannot be ignored. If the nickel substrate contains undesired impurities, or its purity is insufficient, it will limit the capacity of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/10H01G4/005H01G4/008
Inventor 钱时昌
Owner 安徽立查信息科技有限公司