Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of copper-connection microcolumn mechanical property in-situ compression sample

A technology of copper interconnection and microcolumn, which is applied in the field of in-situ compression sample and its preparation for simulating the mechanical performance test of TSV copper interconnection material, which can solve the problems of difficult realization and damage of microcolumn, and achieve copper microcolumn structure Complete, easy to test, and reproducible results

Inactive Publication Date: 2015-01-21
SHANGHAI JIAOTONG UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the patent sample is prepared by conventional technology, and the circular metal pillars formed in the through-silicon vias are not easy to realize, and the micro-pillars will be damaged when the silicon is etched, which leads to the accuracy of the mechanical performance test.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of copper-connection microcolumn mechanical property in-situ compression sample
  • Preparation method of copper-connection microcolumn mechanical property in-situ compression sample
  • Preparation method of copper-connection microcolumn mechanical property in-situ compression sample

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1for the specific preparation process. A titanium seed layer with a thickness of about 0.2 microns is sputtered on the glass sheet; a copper-nickel layer with a total thickness of 200 microns is electroplated on the seed layer, wherein copper and nickel are alternately electroplated, and the last layer is guaranteed to be a nickel layer; Spin-coat negative resist with a thickness of 50 microns on the nickel layer; pattern the negative resist with RIE etching to form holes with a diameter of 5 microns and a depth of 50 microns; electroplate nickel in the etched holes; remove the photolithography Glue, seed layer, release the nickel column based on copper nickel; spin coat a layer of PDMS on the nickel column; directly peel off the PDMS from the nickel column after curing treatment; sputter a layer of 0.2 on the stripped PDMS Micron titanium seed layer and a layer of 0.5 micron copper seed layer; electroplating copper to form a high aspect ratio copper int...

Embodiment 2

[0047] Such as figure 1 for the specific preparation process. A titanium seed layer with a thickness of about 0.4 microns was sputtered on a glass sheet; a nickel layer with a total thickness of 250 microns was electroplated on the seed layer; a negative resist with a thickness of 150 microns was spin-coated on the nickel layer; engraved with RIE The etching method is negative resist patterning to form a hole with a diameter of 25 microns and a depth of 150 microns; electroplate nickel in the etched hole; remove the photoresist and seed layer, and release the nickel pillar based on nickel; A layer of PDMS was spin-coated on the column; after curing, the PDMS was directly peeled off from the nickel column; a layer of 0.15 micron titanium seed layer and a layer of 0.6 micron copper seed layer were sputtered on the peeled PDMS; electroplating copper, Form a high aspect ratio copper interconnected microcolumn structure; finally peel off the PDMS from the copper column to release ...

Embodiment 3

[0056] Such as figure 1 for the specific preparation process. Sputter a titanium seed layer with a thickness of about 0.5 microns on the glass sheet; electroplate a copper-nickel layer with a total thickness of 250 microns on the seed layer, wherein copper and nickel are alternately electroplated, and ensure that the last layer is a nickel layer; Spin-coat negative resist with a thickness of 200 microns on the nickel layer; pattern the negative resist with RIE etching to form holes with a diameter of 50 microns and a depth of 200 microns; electroplate nickel in the etched holes; remove the photolithography Glue, seed layer, release the nickel column based on copper nickel; spin coat a layer of PDMS on the nickel column; directly peel off the PDMS from the nickel column after curing treatment; sputter a layer of 0.25 on the stripped PDMS Micron titanium seed layer and a layer of 0.8 micron copper seed layer; electroplating copper to form a high aspect ratio copper interconnect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a copper-connection microcolumn mechanical property in-situ compression sample and a preparation method thereof. The sample is a round metal column formed in a PDMS (Polydimethylsiloxane) hole, and comprises a sample part and a fixing end part for fixing the sample; and the fixing end part is of a round or square flat plate structure, and the sample part is arranged at the upper end part of the fixing end part. A main body of the sample is micron-sized, the stress direction of the sample is consistent to the growth direction of the metal column, the technology of plating the metal copper column by a template substrate made of PDMS solves the problem of influence on accuracy of testing the mechanical property of the metal copper column caused by corrosion to the metal copper column during a process of etching silicon of TSV (Through Silicon Vias), reduces the technical cycle of the experiment, and is excellent in reproducibility and high in yield; the problem that mechanical property test data of a thin film layer cannot truly reflect the mechanical property of the copper-connection material in the TSV is solved, and the authenticity of the mechanical property parameters of the TSV copper-connection material in 3D (three-dimensional) package design and analogue simulation is improved.

Description

technical field [0001] The invention relates to a compression sample for micro-testing technology and a preparation method thereof, in particular to an in-situ compression sample for simulating mechanical property testing of TSV copper interconnection materials and a preparation method thereof. Background technique [0002] TSV (Through Silicon Vias) stacked interconnection technology can not only improve three-dimensional integration, but also reduce interconnection delay due to its advantages of short-distance interconnection, which is an important direction for the development of microelectronics technology. Since the preparation process and structural size of the copper interconnection material in TSV are different from those of the macroscopic bulk copper material, the basic mechanical properties of the material, such as yield strength, fracture strength, and Young's modulus, are significantly different from those of the macroscopic material. difference. [0003] PDMS ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28G01N3/02
Inventor 汪红王昭瑜程萍丁桂甫顾挺王慧颖张丛春
Owner SHANGHAI JIAOTONG UNIV