Concentric circle mask, graphical substrate and manufacture method

A patterned substrate and manufacturing method technology, applied in the direction of photolithographic process exposure device, photographic process of pattern surface, instrument, etc., can solve the problem of inaccurate control of photolithographic pattern overlay, crown shape difference, inter-chip Repeatability and other issues, to avoid inaccurate control, simple operation, and simplified process

Inactive Publication Date: 2013-07-10
XIAN SHENGUANG ANRUI PHOTOELECTRIC TECH +1
View PDF5 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this kind of CPSS has a significant effect on improving the brightness of LEDs, it needs to be exposed twice in the manufacturing process and SiO2 must be deposited, so the process is complicated and the cost is high; an

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Concentric circle mask, graphical substrate and manufacture method
  • Concentric circle mask, graphical substrate and manufacture method
  • Concentric circle mask, graphical substrate and manufacture method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0034] The invention provides a concentric circular mask, such as figure 1 As shown, the concentric circle mask includes a photoresist plate, and the photoresist plate has an array of concentric circles, and each concentric circle 1 has an inner circle 2, a middle ring 3 and an oute...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a concentric circles mask comprising a lithography plate with concentric circle arrays, wherein each concentric circle sequentially has an inner ring, a middle ring and an outer ring, and parts corresponding to the inner ring and the outer ring of the concentric circle are lightproof. The invention further provides a graphical substrate manufactured by the concentric circles mask. The graphical substrate has a crown-type structure distributed in arrays, and a central top of the crown-type structure is a triangle conical shape. The invention also provides a manufacture method of the graphical substrate. By using the concentric circles mask, a manufacture flow of the graphical substrate with the crown-type structure can be simplified, the cost can be reduced, and meanwhile problems of crown morphology differences after etching caused by not accurately controlled lithography graphic overlay during batch production, and sheet repeatability due to deformation can be prevented.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a concentric circular mask, a patterned substrate and a manufacturing method. Background technique [0002] At present, GaN-based (gallium nitride-based) LEDs (light-emitting diodes) have been widely used in full-color displays, traffic lights, and liquid crystal backlight displays, and are gradually entering the field of lighting. To meet the requirements of next-generation projectors, automotive headlights, and high-end markets, efforts have been made to increase optical power and external quantum efficiency. Generally, the brightness of LED can be expressed as the product of internal quantum efficiency and external quantum efficiency (assuming that the current injection efficiency is 100%). On the one hand, due to the large lattice mismatch and thermal expansion coefficient, the GaN-based epitaxial layer on the sapphire substrate still has a high threading dislocation den...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F1/54G03F7/20G03F1/80H01L33/00
Inventor 缪炳有黄宏嘉张汝京
Owner XIAN SHENGUANG ANRUI PHOTOELECTRIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap