An etching method for HgCdTe material with low damage and high uniformity

Abstract

The invention discloses a low-damage high-uniformity etching method for hgcdte materials. The etching method includes steps of 1), photoetching according to an etching graphic on a chip of a hgcdte film; 2), adhering the chip to a sample disc by heat conduction cooling liquid prior to placing the chip in an etching chamber of an ICP (inductively coupled plasma) device with PTSA (panel three spiral antenna) plasma source, and etching by utilizing the ICP device; 3), subjecting the etched chip to ultrasonic infiltration in deionized water after etching; 4), placing the chip into bromine-methanol corrosive liquid for mild etching after the ultrasonic infiltration; and 5) cleaning the etched chip to finish the etching. Based on an ICP etching with the PTSA plasma source, combined with a mild etching process of the ultrasonic infiltration with bromine methanol at freezing point and assisted with special high heat conduction adhesives, the etching method can remove affected layers of the hgcdte materials which appear easily during the etching process, so that a low-damage high-uniformity etching effect is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an etching method for HgCdTe materials with low damage and high uniformity. Background technique [0002] Infrared focal plane detection technology has significant advantages such as wide spectral response band, more ground target information can be obtained, and can work day and night. It is widely used in early warning detection, intelligence reconnaissance, damage effect assessment, and investigation, development and Management, weather forecast, geothermal distribution, earthquake, volcanic activity, space astronomical exploration and other fields. [0003] HgCdTe infrared detector chip is one of the representative products of infrared detection technology. There are many processes to prepare this chip, including semiconductor device processes such as photolithography, ion implantation, passivation, electrode deposition, and etching. Among them, etching is the main m...

AI Technical Summary

Problems solved by technology

The mercury cadmium telluride material used to prepare the chip is fragile due to its own chemical bond, and it is easy to break when it receives the action of external ions, resulting in an imbalance in the chemical ratio of the surface atoms, and in severe cases, the material type is reversed. Introducing a pn junction, which degrades device performance

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